scope:

This specification covers the detail requirements for monolithic silicon, operational amplifiers. Two product assurance classes and a choice of case outline and lead finish are provided for each type and are reflected in the complete Part or Identifying Number (PIN) (see 6.6).

The device types shall be as follows:

Device type Circuit 01 Single operational amplifier, internally compensated, low power, high performance 02 Single operational amplifier, internally compensated, high impedance, wide band 03 Single operational amplifier, externally compensated, high impedance, wide band 04 Single operational amplifier internally compensated, precision, high slew rate 05 Single operational amplifier, internally compensated, high slew rate 06 Single operational amplifier, externally compensated, high slew rate 07 Single operational amplifier, internally compensated, high speed, precision 08 Single operational amplifier, internally compensated, high speed, fast-settling, precision

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: NASA Part Project Office, Code 311.A NASA/Goddard Space Flight Center, Greenbelt, MD 20771, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outlines shall be designated as follows:

Outline letter Case outline (see MIL-M-38510, appendix C) G A-1 (8-lead, .370" × .185"), can package H F-4 (10-lead, .290" × .260" × .085), flat package (device types 01, 02, and 03 only) P D-4 (8-lead, .405" × .310" × .200"), dual-in-line package (device types 02, 03, 04, 05, 06, 07, and 08 only) 2 C-2 (20-terminal, .358" × .358" × .100"), square chip carrier package (device types 07 and 08 only)

Supply voltage range - - - - - - - - - - - - - ±20 V dc 1/ Input voltage range - - - - - - - - - - - - - ±15 V dc 2/ 3/ Differential input voltage range: 2/ 3/ Device type 01 - - - - - - - - - - - - - - - ±18 V dc Device types 02 and 03 - - - - - - - - - - - ±12 V dc Device types 04, 05, and 06- - - - - - - - - ±15 V dc Device types 07 and 08 - - - - - - - - - - - ±20 V dc Storage temperature range - - - - - - - - - - −65°C to +125°C Lead temperature (soldering, 10 seconds) - - - +300°C Junction temperature (T_J)- - - - - - - - - - - +175°C

Supply voltage range - - - - - - - - - - - - - ±15 V dc Ambient temperature range - - - - - - - - - - −55°C to +125°C

Case Maximum allowable Maximum Maximum Package outline power dissipation θ_JC θ_JA 8-lead can G 300 mW at T_A = +125°C 40°C/W 150°C/W 10-lead flat package H 300 mW at T_A = +125°C 45°C/W 150°C/W 8-lead dual-in-line P 500 mW at T_A = +125°C 26°C/W 119°C/W 20-terminal square 2 500 mW at T_A = +125°C 30°C/W 120°C/W chip carrier

intended Use:

Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.