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DLA - SMD-5962-93177 REV A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 9 PARALLEL FIFO, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 30 September 1993
Status: inactive
Page Count: 27
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and space application (device classes S and V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class 0 microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of radiation hardness assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes M, B, and S RHA marked devices shall meet the MIL-M-38510 specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number 1/ Circuit function Access time 01 7206 16K × 9 parallel CMOS FIFO 50 ns 02 7206 16K × 9 parallel CMOS FIFO 30 ns 03 7206 16x × 9 parallel CMOS FIFO 20 ns

The device class designator shall be a single letter identifying the product assurance level (see 6.6 herein) as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 B or S Certification and qualification to MIL-M-38510 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X GDIP1-T28 or CDIP2-T28 28 Dual-in-line Y CQCC1-N32 32 Rectangular leadless chip carrier

The lead finish shall be as specified in MIL-M-38510 for classes M, B, and S or MIL-I-38535 for classes Q and V. Finish letter "XI" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, 8, and C are considered acceptable and interchangeable without preference.

Supply voltage range . . . . . . . . . . . . . . . . . . −0.5 V dc to +7.0 V dc DC output current . . . . . . . . . . . . . . . . . . . 50 mA Storage temperature range . . . . . . . . . . . . . . . −65°C to +150°C Maximum power dissipation (PD) . . . . . . . . . . . . . 2.0 w Lead temperature soldering, 10 seconds) . . . . . . . . +260°C Thermal resistance, junction-to-case (ΘJC) . . . . . . . See MIL-STD-1835 Junction temperature (TJ) . . . . . . . . . . . . . . . +150°C 3/

Supply voltage range (VCC) . . . . . . . . . . . . . . 4.5 V dc to 5.5 V dc Minimum high level input Voltage (VIH) . . . . . . . . 2.2 V dc 4/ Maximum low level input Voltage (VIL) . . . . . . . . . 0.8 V dc 5/ Case operating temperature range (TC) . . . . . . . . . −55°C to +125°C

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) . . . . . . . 6/ percent

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

February 10, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K x 9 PARALLEL FIFO, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V). A choice of case outlines and lead finishes are...
February 14, 2009
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K x 9 PARALLEL FIFO, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V). A choice of case outlines and lead finishes are...
October 2, 2003
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 9 PARALLEL FIFO, MONOLITHIC SILICON
A description is not available for this item.
April 15, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 9 PARALLEL FIFO, MONOLITHIC SILICON
A description is not available for this item.
December 18, 2001
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 9 PARALLEL FIFO, MONOLITHIC SILICON
A description is not available for this item.
May 30, 2000
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 9 PARALLEL FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
SMD-5962-93177 REV A
September 30, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 9 PARALLEL FIFO, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...
June 9, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 9 PARALLEL FIFO, MONOLITHIC SILICON
A description is not available for this item.

References

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