DLA - MIL-S-19500/159H
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TYPES 1N821, 11823, 11825, 1N827, 11829, AND 1N821-1, 111823-1, 11825-1, 1N827-1, AND 1N829-1, 1N821UR-1, lN823UR-1, 1N825UR-1, 1N82NR-1, AND 1N82WR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, Dl LI RI FI GI H; JANSM, Dl LI RI F I GI H; JANHCII, Dl LI RI FI GI H; AND JANKCM, Dl LI RI F I GI H
inactive
| Organization: | DLA |
| Publication Date: | 16 May 1994 |
| Status: | inactive |
| Page Count: | 14 |
scope:
This specification covers the detail requirements for 6.2 volts ±5 percent, silicon, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-S-19500, and two levels of product assurance for each unencapsulated device type die. Seven levels of radiation hardened (total dose only) product assurance are provided for each encapsulated device type as specified in MIL-S-19500, and two levels of product assurance for each unencapsulated device type die.
See figure 1 (D0-7 and D0-35), figure 2 (D0-213AA), figure 3 (JANHCA and JANKCA), and figure 4 (JANHCB and JANKCB).
Primary electrical characteristics at TA = +25°C unless otherwise specified. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Electronics Supply Center, ATTN: DESC-ELDT, 1507 Wilmington Pike, Dayton, OH 45444-5765 by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Document History
March 16, 2021
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, ENCAPSULATED (AXIAL LEADED AND SURFACE MOUNT PACKAGE) AND UN-ENCAPSULATED, RADIATION HARDENED (TOTAL DOSE ONLY), QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC AND JANKC;
Scope.
This specification covers the performance requirements for 6.2 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance (JAN, JANTX,...
August 9, 2019
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, ENCAPSULATED (AXIAL LEADED AND SURFACE MOUNT PACKAGE) AND UN-ENCAPSULATED, RADIATION HARDENED (TOTAL DOSE ONLY), QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC AND JANKC
Scope.
This specification covers the performance requirements for 6.2 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance (JAN, JANTX,...
January 19, 2019
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY)
This specification covers the performance requirements for 6.2 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and...
January 17, 2017
Semiconductor Device, Diode, Silicon, Temperature Compensated, Voltage-Reference, Types 1N821-1, 1N823-1, 1N825-1, 1N827-1, and 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, and 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC and JANKC; Radiation Hardened (Total Dose Only) Types JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; and JANKCM, D, L, R, F, G, H
A description is not available for this item.
March 1, 2012
SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED, VOLTAGE-REFERENCE, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
This specification covers the performance requirements for 6.2 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each...
February 4, 2009
SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED, VOLTAGE-REFERENCE, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
This specification covers the performance requirements for 6.2 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each...
April 1, 2008
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
This specification covers the performance requirements for 6.2 volts ± 5 percent, silicon, voltage-reference, temperature compensated diodes. Four levels of product assurance are provided for each...
July 1, 2004
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
This specification covers the performance requirements for 6.2 volts ± 5 percent, silicon, voltage-reference, temperature compensated diodes. Four levels of product assurance are provided for each...
September 18, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
This specification covers the performance requirements for 6.2 volts ±5 percent, silicon, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as...
March 17, 2000
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1 N821-1, 1 N823-1, 1 N825-1, 1 N827-1, AND 1 N829-1, 1 N821 UR-I, 1 N823UR-1, 1 N825UR-1, 1 N827UR-1, AND 1 N829UR-1, JAN, JANTX, JANTXV, JANJ, JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
A description is not available for this item.
November 19, 1999
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANJ, JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
This specification covers the performance requirements for 6.2 volts ± 5 percent, silicon, voltage-reference diodes. Five levels of product assurance are provided for each encapsulated device type as...
July 1, 1998
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TYPES 1N821-1, 1N823-1, lN825-1, 1N827-1, AND 1N829-1, lN821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, 0, L, R, F, G, H
This specification covers the performance requirements for 6.2 volts ± 5 percent, silicon, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as...
MIL-S-19500/159H
May 16, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TYPES 1N821, 11823, 11825, 1N827, 11829, AND 1N821-1, 111823-1, 11825-1, 1N827-1, AND 1N829-1, 1N821UR-1, lN823UR-1, 1N825UR-1, 1N82NR-1, AND 1N82WR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, Dl LI RI FI GI H; JANSM, Dl LI RI F I GI H; JANHCII, Dl LI RI FI GI H; AND JANKCM, Dl LI RI F I GI H
This specification covers the detail requirements for 6.2 volts ±5 percent, silicon, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as...
March 8, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N821, 1N823, 1N825, 1N827, 1N829, AND 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JANTX, JANTXV, JANS, AND JANC .
A description is not available for this item.
January 22, 1993
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N821, 1N823, 1N825, 1N827, 1N829, AND 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, IN827UR-1, AND IN829UR-1, JANTX, JANTXV, JANS, AND JANC
This specification covers the detail requirements for 6.2 volts ±5 percent, silicon, voltage-reference diodes. Four levels of product assurance are provided for each device type as specified in...
May 15, 1992
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, types 1n821, 1n825, and 1n829, 1n821-1, 1n823-1, 1n825-1, 1n827-1, and 1n829-1, 1n821ur-1, 1n823ur-1, 1n823ur-1, 1n825ur-1, 1n827ur-1 and 1n829ur-1, jantx, jantxv, jans, and janc
A description is not available for this item.
January 25, 1991
SEMICONDUCTOR DEVICE. DIODE. SILICON. VOLTAGE-REFERENCE TYPES 1N821, 1N823, 1N825, 11827, AND lN829,'1N821-1, lN823-1, 1N825-1, JANTX, JANTXV, AND JANS 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1,
A description is not available for this item.
December 2, 1985
SEMICONDUCTOR D E V I C E , DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N821, 1N823, 1N825, 1N827, 1N829, AND 1N821-1, 1N823-1, 1N825-1, 11827-1, 1N829-1, JAN, JANTX, JANTXV, AND JANS.
A description is not available for this item.
September 29, 1980
SEMICONDUCTOR DEVICE , DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N821, 1N823, 1N825, 1N827, 1N829, TX and TXV
A description is not available for this item.
January 25, 1978
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N821, 1N823, 1N825, 1N827, 1N829, TX AND TXV
A description is not available for this item.
October 11, 1973
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N821, 11823. 1N825, 13827, 13829, TX AND TXV
A description is not available for this item.
January 31, 1973
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE -REFERENCE TYPES 1N821, 1N823, 1N825, 1N827, 1N829, TXANDTXV
A description is not available for this item.
December 12, 1972
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N821, 1N823, 1N825, 1N827, 1N829, TX AND TXV
A description is not available for this item.
February 1, 1972
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N821, 1N823, 1N825, 1N827, 1N829, TX1N821, TX1N823, TX1N827, AND TX1N829
A description is not available for this item.
March 17, 1970
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES lN821,1N823,1N825,1N827,1N829 TXlN821, TXlN823, TXlN825, TXlN827, AND TXlN829
A description is not available for this item.