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DLA - SMD-5962-91726

MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, SCAN TEST DEVICE WITH OCTAL BUFFER, THREE-STATE OUTPUTS, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 6 January 1994
Status: inactive
Page Count: 23
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54BCT8244A Scan test device with octal buffer, three-state outputs

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835, and as follows:

Outline letter Descriptive designator Terminals Package style L GDIP3-T24 or CDIP4-T24 24 Dual-in-line 3 CQCC1-N28 28 Leadless chip carrier

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (VCC) - - - - - - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC input voltage range (except TMS) (VIN) - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc 4/ DC input voltage range (TMS) (VIN) - - - - - - - - - - - - - - - - - −0.5 V dc to +12.0 V dc 4/ DC output voltage range applied to any output in the disabled or power-off state (VOUT) - - - - - - - - - - - - - - −0.5 V dc to +5.5 V dc DC output voltage range applied to any output in the high state (VOUT) - - - - - - - - - - - - - - - - - - - - - - - −0.5 V dc to VCC DC input clamp current (IIK) - - - - - - - - - - - - - - - - - - - - −30 mA DC output current into any output in the low state (IOL) (per output): TDO - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - +40 mA Any Y - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - +96 mA Storage temperature range (TSTG) - - - - - - - - - - - - - - - - - - −65°C to +150°C Lead temperature (soldering, 10 seconds) - - - - - - - - - - - - - - +300°C Thermal resistance, junction-to-case (ΘJC) - - - - - - - - - - - - - See MIL-STD-1835 Junction temperature (TJ) - - - - - - - - - - - - - - - - - - - - - - +175°C Maximum power dissipation (PD) - - - - - - - - - - - - - - - - - - - 497 mW 5/

Supply voltage range (VCC) - - - - - - - - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc Maximum low level input voltage (VIL) - - - - - - - - - - - - - - - 0.8 V Minimum high level input voltage (VIH) - - - - - - - - - - - - - - - 2.0 V Double high level input voltage (TMS) (VIHH) - - - - - - - - - - - - +10.0 V dc minimum to +12.0 V maximum Maximum input clamp current (IIK) - - - - - - - - - - - - - - - - - −18 mA Maximum high level output current (IOH): TDO - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - −3 mA Any Y - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - −12 mA Maximum low level output current (IOL): TDO - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 20 mA Any Y - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 48 mA Minimum setup time (t2): Any A before TCK↑ - - - - - - - - - - - - - - - - - - - - - - - - - 6.0 ns Any [O bar][E bar] before TCK↑ - - - - - - - - - - - - - - - - - - - - - - - - 6.0 ns TDI before TCK↑ - - - - - - - - - - - - - - - - - - - - - - - - - - 6.0 ns TMS before TCK↑ - - - - - - - - - - - - - - - - - - - - - - - - - - 12.0 ns Minimum hold time (th): Any A after TCK↑ - - - - - - - - - - - - - - - - - - - - - - - - - 4.5 ns Any [O bar][E bar] after TCK↑ - - - - - - - - - - - - - - - - - - - - - - - - - 4.5 ns TDI after TCK↑ - - - - - - - - - - - - - - - - - - - - - - - - - - 4.5 ns TMS after TCK↑ - - - - - - - - - - - - - - - - - - - - - - - - - - 0.0 ns Minimum pulse width (tw): TCK high or low - - - - - - - - - - - - - - - - - - - - - - - - - - 25.0 ns TMS double high - - - - - - - - - - - - - - - - - - - - - - - - - - 50.0 ns 6/ Delay time, power-up to TCK↑ (td) - - - - - - - - - - - - - - - - - - 100.0 ns 6/ Maximum TCK frequency (fCLK) - - - - - - - - - - - - - - - - - - - - 20 MHz Case operating temperature range (TC) - - - - - - - - - - - - - - - - −55°C to +125°C

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) - - - - - - - - - - - XX percent 1/

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

December 17, 2021
MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, SCAN TEST DEVICE WITH OCTAL BUFFER, THREE-STATE OUTPUTS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Replaceability....
March 25, 2015
MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, SCAN TEST DEVICE WITH OCTAL BUFFER, THREE-STATE OUTPUTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
September 2, 2008
MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, SCAN TEST DEVICE WITH OCTAL BUFFER, THREE-STATE OUTPUTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-91726
January 6, 1994
MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, SCAN TEST DEVICE WITH OCTAL BUFFER, THREE-STATE OUTPUTS, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...

References

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