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DLA - SMD-5962-86063 REV F

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 262, 144-BIT (32K X 8) UV ERASABLE PROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 16 February 1994
Status: inactive
Page Count: 23
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit Access time 01 (see 6.6) 32K × 8-bit UV EPROM 200 ns 02 (see 6.6) 32K × 8-bit UV EPROM 250 ns 03 (see 6.6) 32K × 8-bit UV EPROM 300 ns 04 (see 6.6) 32K × 8-bit UV EPROM 170 ns 05 (see 6.6) 32K × 8-bit UV EPROM 150 ns 06 (see 6.6) 32K × 8-bit UV EPROM 120 ns 07 (see 6.6) 32K × 8-bit UV EPROM 90 ns 08 (see 6.6) 32K × 8-bit UV EPROM 70 ns 09 (see 6.6) 32K × 8-bit UV EPROM 55 ns 10 (see 6.6) 32K × 8-bit UV EPROM 45 ns

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X GDIP1-T28 or CDIP2-T28 28 Dual-in-line 1/ y CQCC1-N32 32 Dual-in-line 1/ Z See figure 1 32 J-lead chip carrier 1/ U CDIP3-T28 or GDIP4-T28 28 Dual-in-line 1/

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein). Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Storage temperature - - - - - - - - - - - - - - - - - −65°C to +150°C Input voltages with respect to ground - - - - - - - - +6.5 V dc to −0.3 V dc Output voltages with respect to ground - - - - - - - VCC +0.3 V dc to GND −0.3 V dc VPP supply voltage with respect to ground - - - - - - +14.0 V dc to −0.6 V dc Power dissipation (PD) 2/ - - - - - - - - - - - - - - +500 mW Lead temperature (soldering, 10 seconds)- - - - - - - +300°C Thermal resistance, junction-to-case (ΘJC): Case outlines X, Y, and U - - - - - - - - - - - - - See MIL-STD-1835 Case outline Z - - - - - - - - - - - - - - - - - - 13°C/W Junction temperature (TJ) - - - - - - - - - - - - - - +150°C

Case operating temperature (TC) - - - - - - - - - - - −55°C to +125°C Supply voltage (VCC)- - - - - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

March 22, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 262,144-BIT (32K x 8) UV ERASABLE PROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Replaceability....
June 5, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 262,144-BIT (32K x 8) UV ERASABLE PROM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
February 12, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 262, 144-BIT (32K x 8) UV ERASABLE PROM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
July 17, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 262, 144-BIT (32K X 8) UV ERASABLE PROM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
June 11, 1997
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 262, 144-BIT (32K X 8) UV ERASABLE PROM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-86063 REV F
February 16, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 262, 144-BIT (32K X 8) UV ERASABLE PROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
October 15, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 262, 144-BIT (32K X 8) UV ERASABLE PROM, MONOLITHIC SILICON
A description is not available for this item.
January 30, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 262, 144-BIT (32K X 8) UV ERASABLE PROM, MONOLITHIC SILICON
A description is not available for this item.
December 5, 1990
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 262, 144-BIT (32K X 8) UV ERASABLE PROM, MONOLITHIC SILICON
A description is not available for this item.
February 1, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 262, 144-BIT (32K X 8) UV ERASABLE PROM, MONOLITHIC SILICON
A description is not available for this item.
December 17, 1987
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 262, 144-BIT (32K X 8) UV ERASABLE PROM, MONOLITHIC SILICON
A description is not available for this item.
February 12, 1987
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 262, 144-BIT (32K X 8) UV ERASABLE PROM, MONOLITHIC SILICON
A description is not available for this item.

References

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