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DOD - SMD 5962-86806

MICROCIRCUIT, LINEAR, CURRENT MODE PULSE WIDTH MODULATOR, MONOLITHIC SILICON

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Organization: DOD
Publication Date: 22 March 1989
Status: inactive
Page Count: 12
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit function 01 1846 Controller, pulse-width modulator 02 1847 Controller, pulse-width modulator

The case outline shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline E D-2 (16-lead, .840" × .310" × .200") dual-in-line package F F-5 (16-lead, .440" × .285" × .085") flat package 2 C-2 (20 terminal, .358" × .358" × .100") square leadless chip carrier package

Supply voltage (VIN) - - - - - - - - - - - - - - - - +40 V dc Collector supply voltage (VC) - - - - - - - - - - - +40 V dc Output current, source or sink - - - - - - - - - - - 500 mA dc Analog inputs- - - - - - - - - - - - - - - - - - - - −0.3 V to +VIN Reference output current - - - - - - - - - - - - - −30 mA dc Sync output current- - - - - - - - - - - - - - - - - −5 mA dc Error amplifier output current - - - - - - - - - - - −5 mA dc Soft start sink current- - - - - - - - - - - - - - - 50 mA dc Oscillator charging current- - - - - - - - - - - - - 5 mA dc Power dissipation at TA = +25°C 1/- - - - - - - - - 1000 mW Power dissipation at TC = +25°C 2/- - - - - - - - - 2000 mW Junction temperature (TJ)- - - - - - - - - - - - - - +150°C Thermal resistance : Junction-to-ambient (θJA): Case E - - - - - - - - - - - - - - - - - - - - - 100°C/W Case F - - - - - - - - - - - - - - - - - - - - - 115°C/W Case 2 - - - - - - - - - - - - - - - - - - - - - 88°C/W Junction-to-case (θJC) - - - - - - - - - - - - - - See MIL-M-38510, appendix C Lead temperature (soldering, 10 seconds) - - - - - - 300°C Storage temperature range- - - - - - - - - - - - - - −65°C to +150°C

Supply voltage range - - - - - - - - - - - - - - - - +8 V dc to +40 V dc Collector supply voltage range - - - - - - - - - - - +4.5 V dc to +40 V dc Ambient operating temperature range (TA) - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

April 26, 2023
MICROCIRCUIT, LINEAR, CURRENT MODE PULSE WIDTH MODULATOR (PWM), MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead...
January 27, 2017
MICROCIRCUIT, LINEAR, CURRENT MODE PULSE WIDTH MODULATOR (PWM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
October 16, 2015
MICROCIRCUIT, LINEAR, CURRENT MODE PULSE WIDTH MODULATOR, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
March 10, 2014
MICROCIRCUIT, LINEAR, CURRENT MODE PULSE WIDTH MODULATOR, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
October 20, 2010
MICROCIRCUIT, LINEAR, CURRENT MODE PULSE WIDTH MODULATOR, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
December 15, 2008
MICROCIRCUIT, LINEAR, CURRENT MODE PULSE WIDTH MODULATOR, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
March 4, 2003
MICROCIRCUIT, LINEAR, CURRENT MODE PULSE WIDTH MODULATOR, MONOLITHIC SILICON
A description is not available for this item.
December 1, 2000
MICROCIRCUIT, LINEAR, CURRENT MODE PULSE WIDTH MODULATOR, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
June 24, 1994
MICROCIRCUIT, LINEAR, CURRENT MODE PULSE WIDTH MODULATOR, MONOLITHIC SILICON
A description is not available for this item.
SMD 5962-86806
March 22, 1989
MICROCIRCUIT, LINEAR, CURRENT MODE PULSE WIDTH MODULATOR, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". The...
March 10, 1987
MICROCIRCUIT, LINEAR, CURRENT MODE PULSE WIDTH MODULATOR, MONOLITHIC SILICON
A description is not available for this item.

References

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