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DLA - SMD-5962-88638 REV B

MICROCIRCUIT, MEMORY, DIGITAL CMOS, PROGRAMMABLE LOGIC CELL ARRAY, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 16 October 1995
Status: inactive
Page Count: 19
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Toggle speed 02 2018 10 × 10, 1800 gate programmable array 33 MHz 03 2018 10 × 10, 1800 gate programmable array 50 MHz 04 2018 10 × 10, 1800 gate programmable array 70 MHz 05 2018 10 × 10, 1800 gate programmable array 100 MHz

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X CMGA15-PN 84 pin grid array package 1/

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein). Finish Letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (VCC) - - - - - - - - - - - - −0.5 V to 7.0 V Input voltage range (VIN) - - - - - - - - - - - - - −0.5 V to VCC + 0.5 V Voltage applied to three-state output range (VTS) - −0.5 V to VCC + 0.5 V Storage temperature range (TSTG) - - - - - - - - - −65°C to +150°C Maximum soldering temperature (soldering, 10 seconds) +260°C Thermal resistance (ΘJC) - - - - - - - - - - - - - See MIL-STD-1835 Maximum junction temperature (TJ) - - - - - - - - - +150°C

Case operating temperature range (TC) - - - - - - - −55°C to +125°C Supply voltage relative to ground range (VCC) - - - 4.5 V dc minimum to 5.5 V dc maximum Input voltage range (VIN) - - - - - - - - - - - - 0.0 V dc to VCC Output voltage range (VOUT) - - - - - - - - - - - 0.0 V dc to VCC

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

February 22, 2018
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE LOGIC CELL ARRAY, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes
July 25, 2011
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE LOGIC CELL ARRAY, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
October 4, 1996
MICROCIRCUIT, MEMORY, DIGITAL CMOS, PROGRAMMABLE LOGIC CELL ARRAY, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-88638 REV B
October 16, 1995
MICROCIRCUIT, MEMORY, DIGITAL CMOS, PROGRAMMABLE LOGIC CELL ARRAY, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
March 22, 1991
MICROCIRCUIT, MEMORY, DIGITAL CMOS, PROGRAMMABLE LOGIC CELL ARRAY, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
November 15, 1989
MICROCIRCUIT, MEMORY, DIGITAL CMOS, PROGRAMMABLE LOGIC CELL ARRAY, MONOLITHIC SILICON
A description is not available for this item.

References

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