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DLA - SMD-5962-88638 REV A

MICROCIRCUIT, MEMORY, DIGITAL CMOS, PROGRAMMABLE LOGIC CELL ARRAY, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 22 March 1991
Status: inactive
Page Count: 20
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Toggle speed 02 2018 10 × 10, 1800 gate programmable array 33 MHz 03 2018 10 × 10, 1800 gate programmable array 50 MHz 04 2018 10 × 10, 1800 gate programmable array 70 MHz

The case outline shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline X P-BC (84-pin, 1.135" × 1.135" × .345"), pin grid array package 1/

Supply voltage (VCC) - - - - - - - - - - - - - - - −0.5 V dc to 7.0 V dc Input voltage (VIN) - - - - - - - - - - - - - - - - −0.5 V dc to VCC + 0.5 V dc Voltage applied to three-state output range (VTS) - −0.5 V dc to VCC + 0.5 V Storage temperature range (TSTG) - - - - - - - - - −65°C to 150°C Maximum soldering temperature (soldering, 10 seconds) +260°C Thermal resistance (OJC)- - - - - - - - - - - - - - See MIL-M-38510, appendix C Maximum voltage temperature (TJ)- - - - - - - - - - +150°C

Case operating temperature range (TC) - - - - - - - −55°C to +125°C Supply voltage relative to ground range (VCC) - - - 4.5 V dc minimum to 5.5 V dc maximum Input voltage range (VIN) - - - - - - - - - - - - - 0.0 V dc to VCC Output voltage range (VOUT) - - - - - - - - - - - - 0.0 V dc to VCC

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

February 22, 2018
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE LOGIC CELL ARRAY, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes
July 25, 2011
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE LOGIC CELL ARRAY, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
October 4, 1996
MICROCIRCUIT, MEMORY, DIGITAL CMOS, PROGRAMMABLE LOGIC CELL ARRAY, MONOLITHIC SILICON
A description is not available for this item.
October 16, 1995
MICROCIRCUIT, MEMORY, DIGITAL CMOS, PROGRAMMABLE LOGIC CELL ARRAY, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
SMD-5962-88638 REV A
March 22, 1991
MICROCIRCUIT, MEMORY, DIGITAL CMOS, PROGRAMMABLE LOGIC CELL ARRAY, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
November 15, 1989
MICROCIRCUIT, MEMORY, DIGITAL CMOS, PROGRAMMABLE LOGIC CELL ARRAY, MONOLITHIC SILICON
A description is not available for this item.

References

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