DLA - MIL-PRF-19500/596G
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, 2N7222U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
inactive
| Organization: | DLA |
| Publication Date: | 16 December 2004 |
| Status: | inactive |
| Page Count: | 25 |
scope:
This specification covers the performance requirements for a N-channel, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum ratings (EAR and EAS) and maximum avalanche current IAR. Two levels of product assurance are provided for die (element evaluation).
intended Use:
The notes specified in MIL-PRF-19500 are applicable to this specification.
Document History
March 11, 2021
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, REPETITIVE AVALANCHE, TYPES 2N7218, 2N7219, 2N7221, 2N7222, ENCAPSULATED (FLANGE AND SURFACE MOUNT PACKAGES) AND UNENCAPSULATED, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for N-channel, enhancement mode, MOSFET, power transistors. These transistors are intended for use in high density power switching...
September 24, 2019
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, REPETITIVE AVALANCHE, TYPES 2N7218, 2N7219, 2N7221, 2N7222, ENCAPSULATED (FLANGE AND SURFACE MOUNT PACKAGES) AND UNENCAPSULATED, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for N-channel, enhancement mode, MOSFET, power transistors. These transistors are intended for use in high density power switching...
February 1, 2018
Semiconductor Device, Repetitive Avalanche, Field Effect, Transistor, N-Channel, Silicon, Types 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, and 2N7222U, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
A description is not available for this item.
April 17, 2013
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, AND 2N7222U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
April 14, 2009
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, AND 2N7222U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
July 24, 2006
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U AND 2N7222U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
MIL-PRF-19500/596G
December 16, 2004
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, 2N7222U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
October 1, 2003
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, 2N7222U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
August 14, 2002
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, 2N7222U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
July 2, 1998
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, 2N7222U, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
November 19, 1997
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7218, 2N7219, 2N72211 2N7222, 2N7218U, 2N7219U, 2N7221U, 2N7222U, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
September 13, 1996
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, 2N7222U, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
September 25, 1995
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U AND 2N7222U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
April 7, 1995
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, 2N7222U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for an N-channel, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product...
August 17, 1994
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U AND 2N7222U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for a N-channel, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product...
October 25, 1993
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, 2N7222U, JANTX, JANTXV, JANS, AND JANC
A description is not available for this item.
September 1, 1992
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, 2N7222U, JANTX, JANTXV, JANS, AND JANC
This specification covers the detail requirements for a N-channel, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product...
February 15, 1991
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7218, 2N7219, 2N7221, 2N7222, JANTX, JANTXV, AND JANS
A description is not available for this item.