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DOD - SMD 5962-94511

MICROCIRCUIT, MEMORY, CMOS, 4K X 9 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON

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Organization: DOD
Publication Date: 20 November 1996
Status: inactive
Page Count: 27
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator.Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number 1/ Circuit function Access time 01 4K × 9 CMOS Parallel Synchronous FIFO 50 ns 02 4K × 9 CMOS Parallel Synchronous FIFO 35 ns 03 4K × 9 CMOS Parallel Synchronous FIFO 25 ns 04 4K × 9 CMOS Parallel Synchronous FIFO 20 ns

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X CQCC1-N32 32 Rectangular leadless chip carrier

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Terminal voltage with respect to ground .......... −0.5 V dc to +7.0 V dc DC output current ................................ 50 mA Storage temperature range ........................ −65°C to +135°C Maximum power dissipation (PD) ................... 1.25 W Lead temperature (soldering, 10 seconds) ......... +260°C Thermal resistance, junction-to-case (θJC): Case X ......................................... See MIL-STD-1835 Junction temperature (TJ) ........................ +175°C

Supply voltage (VCC) ............................. 4.5 V dc to 5.5 V dc Supply voltage (GND) ............................. 0 V Input high voltage (VIH).......................... 2.2 V dc minimum Input low voltage (VIL)........................... 0.8 V dc maximum Case operating temperature range (TC) ............ −55°C to +125°C

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) ............ 3/ percent

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

May 15, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 9 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
November 20, 2009
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 9 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD 5962-94511
November 20, 1996
MICROCIRCUIT, MEMORY, CMOS, 4K X 9 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
December 17, 1993
MICROCIRCUIT, MEMORY, CMOS, 4K X 9 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...

References

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