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NPFC - MIL-M-38510/334

MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND-OR-INVERT GATES, MONOLITHIC SILICON

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Organization: NPFC
Publication Date: 25 October 1984
Status: inactive
Page Count: 12
scope:

This specification covers the requirements for monolithic silicon, Advanced Schottky TTL, positive AND-OR-INVERT logic gate microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number.

The part number shall be in accordance with MIL-M-38510, and as specified herein.

The device type shall be as follows:

Device type Circuit 01 4-2-3-2 input positive AND-OR-INVERT gate

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outline shall be designated as follows:

Letter Case outline (see MIL-M-38510, appendix C) A F-1 (14-lead, ¼" × ¼"), flat package B F-3 (14-lead, 3/16" × ¼"), flat package C D-1 (14-lead, ¼" × ¾"), dual-in-line package D F-2 (14-lead, ¼" × ⅜"), flat package 2 C-2 (20-terminal, .350" × .350"), square chip carrier package

Supply voltage range - - - - - - - - - - - −0.5 V to +7.0 V Input voltage range - - - - - - - - - - - - −1.2 V at −18 mA to +7.0 V Storage temperature range - - - - - - - - - −65°C to +150°C Maximum power dissipation per device (PD) 1/ 25 mW Lead temperature (soldering, 10 seconds)- - 300°C Thermal resistance, junction-to-case, (θJC): Cases (any case in MIL-M-38510) - - - - - - (see MIL-M-38510, appendix C) Cases (all LCC's) - - - - - - - - - - - - - 0.08°C/W 3/ Junction temperature (TJ), 2/ - - - - - - - 175°C

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Supply voltage (VCC)- - - - - - - - - - - - - 4.5 V minimum to 5.5 V maximum Minimum high level input voltage (VIH)- - - - 2.0 V Maximum low level input voltage (VIL) - - - - 0.8 V Normalized fanout (each output) 2/ Low logic level - - - - - - - - - - - - - - 33 maximum High logic level- - - - - - - - - - - - - - 50 maximum Case operating temperature range (TC) - - - - - - - - - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.

Document History

Microcircuits, Digital, Bipolar Advanced Schottky TTL, AND-OR-INVERT Gates, Monolithic Silicon
A description is not available for this item.
June 5, 2018
Microcircuits, Digital, Bipolar Advanced Schottky TTL, AND-ORINVERT Gates, Monolithic Silicon
A description is not available for this item.
August 23, 2013
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND-OR-INVERT GATES, MONOLITHIC SILICON
A description is not available for this item.
November 13, 2008
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND-OR-INVERT GATES, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, Advanced Shottky TTL, positive AND-OR-INVERT logic gate microcircuits. Two product assurance classes and a choice of case...
December 10, 2003
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND-OR-INVERT GATES, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, Advanced Shottky TTL, positive AND-OR-INVERT logic gate microcircuits. Two product assurance classes and a choice of case...
July 8, 2002
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND-OR-INVERT GATES, MONOLITHIC SILICON
A description is not available for this item.
April 18, 1997
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND-OR-INVERT GATES, MONOLITHIC SILICON
A description is not available for this item.
September 10, 1987
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND-OR-INVERT GATES, MONOLITHIC SILICON
A description is not available for this item.
June 23, 1986
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND-OR-INVERT GATES, MONOLITHIC SILICON
A description is not available for this item.
February 10, 1986
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND-OR-INVERT GATES, MONOLITHIC SILICON
A description is not available for this item.
May 29, 1985
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND-OR-INVERT GATES, MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/334
October 25, 1984
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND-OR-INVERT GATES, MONOLITHIC SILICON
This specification covers the requirements for monolithic silicon, Advanced Schottky TTL, positive AND-OR-INVERT logic gate microcircuits. Two product assurance classes and a choice of case outlines...
April 5, 1983
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND-OR-INVERT GATES, MONOLITHIC SILICON
A description is not available for this item.
November 17, 1982
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND-OR-INVERT GATES, MONOLITHIC SILICON
A description is not available for this item.
May 19, 1981
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND-OR-INVERT GATES, MONOLITHIC SILICON
A description is not available for this item.

References

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