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DLA - SMD-5962-91682

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K X 8 BIT 5-VOLT PROGRAMMING EEPROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 5 August 1993
Status: inactive
Page Count: 29
scope:

This drawing forms a part of a one pert - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and space application (device classes S and V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of radiation hardness assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time Endurance 01 29C010 128K × 8 CMOS 5-VOLT PROGRAMMING EEPROM 200 ns 1000 cycles 02 29C010 12BK × 8 CMOS 5-VOLT PROGRAMMING EEPROM 150 ns 1000 cycles 03 29C010 128K × 8 CMOS 5-VOLT PROGRAMMING EEPROM 120 ns 1000 cycles

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 B or S Certification and qualification to MIL-M-38510 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1815 and as follows:

Outline letter Descriptive designator Terminals Package style X GDIP1-T32 or CDIP2-T32 32 Dual-in-line Y CQCC1-N32 32 Rectangular leadless chip carrier

The lead finish shall be as specified in MIL-M-38510 for classes M, B, and S or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (VCC) 2/ . . . . . . . . . . . . . . . . . . −0.5 V dc to +6.0 V dc Voltage on any pin with respect to ground 2/ . . . . . . . . . . −0.5 V dc to +6.0 V dc Voltage on pin A9 and [O bar][E bar] with respect to ground 3/ . . . . . . . −0.5 V dc to +13.5 V dc Storage temperature range . . . . . . . . . . . . . . . . . . . . −65°C to +150°C Maximum power dissipation (PD) . . . . . . . . . . . . . . . . . 1.0 W Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . +300°C Junction temperature (TJ) 4/ . . . . . . . . . . . . . . . . . . +150°C Thermal resistance, junction-to-case (ΘJC) . . . . . . . . . . . See MIL-STD-1835 Data retention . . . . . . . . . . . . . . . . . . . . . . . . . 10 years minimum Endurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000 cycles/sector, minimum

Supply voltage range (VCC) . . . . . . . . . . . . . . . . . . . . +4.5 V dc to +5.5 V dc Case operating temperature range (TC) . . . . . . . . . . . . . . −55°C to +125°C Low level input voltage range (VIL) . . . . . . . . . . . . . . . −0.5 V dc to +0.8 V dc High level input voltage range (VIH1) . . . . . . . . . . . . . . +2.0 V dc to VCC +0.5 V dc High level input voltage range (VIH2) . . . . . . . . . . . . . . VCC −5.0 V dc VCC+0.5 V dc Chip clear voltage (VH) . . . . . . . . . . . . . . . . . . . . . +12.0 ±0.5 V dc

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) . . . . . . . . . . xx percent 6/

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

April 19, 2018
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K X 8 BIT 5-VOLT PROGRAMMING EEPROM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
August 24, 2012
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K X 8 BIT 5-VOLT PROGRAMMING EEPROM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
SMD-5962-91682
August 5, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K X 8 BIT 5-VOLT PROGRAMMING EEPROM, MONOLITHIC SILICON
This drawing forms a part of a one pert - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...

References

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