NPFC - MIL-S-19500/595
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N723ó, 2N7237, 2N7236U, 2N7237U, JANTX, JANTXV, JANS, AND JANC
inactive
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| Organization: | NPFC |
| Publication Date: | 1 September 1992 |
| Status: | inactive |
| Page Count: | 22 |
scope:
This specification covers the detail requirements for a P-channel, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product assurance are provided for each device type as specified in MIL-S-19500, with avalanche energy maximum ratings (EAR and EAS) and maximum avalanche current IAR. One level of product assurance for die (element evaluation). The "U" denotes surface mounted devices.
See figure 1 (TO-254AA), figure 2 for JANC die dimensions, and figure 3 for surface mount.
TC = +25°C, unless otherwise specified. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Electronics Supply Center, ATTN: DESC-ECT, 1507 Wilmington Pike, Dayton, OH 45444-5280, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
TC = +25°C, unless otherwise specified.
Document History
January 30, 2019
TRANSISTOR, REPETITIVE AVALANCHE, FIELD EFFECT, P-CHANNEL, SILICON, TYPES 2N7236, AND 2N7237, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
November 7, 2018
Semiconductor Device, Repetitive Avalanche, Field Effect, Transistor, P-Channel, Silicon, Types 2N7236, 2N7237, 2N7236U, and 2N7237U, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
A description is not available for this item.
November 20, 2013
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
October 25, 2010
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
April 22, 2009
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
June 26, 2006
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
October 25, 2004
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
September 2, 2003
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
August 13, 2002
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
July 2, 1998
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
February 18, 1997
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
August 26, 1996
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
September 25, 1995
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
April 27, 1995
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N723ó, 217237, 2N72W, AND 2N723N JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product...
November 22, 1993
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N723ó, 217237, 2N7236U, 2N7237U, JANTX, JANTXV, JANS, AND JANC
A description is not available for this item.
MIL-S-19500/595
September 1, 1992
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N723ó, 2N7237, 2N7236U, 2N7237U, JANTX, JANTXV, JANS, AND JANC
This specification covers the detail requirements for a P-channel, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product...
February 15, 1991
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON TYPES 2N723ó, 2N7237, JANTX, JANTXV, AND JANS
A description is not available for this item.