scope:

This specification covers the performance requirements for silicon, voltage regulator diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.

See figures 1, 2, 3, 4, and 5.

Maximum ratings are as shown in columns 8 and 10 of table IV herein, and as follows:

P_T = 5 W at T_L = +65°C, L = .375 inch (9.53 mm), derate 45 mW/°C above T_L = +65°C (1N4954 through 1N4996). 1/

P_T = 5 W at T_L = +25°C, L = .375 inch (9.53 mm), derate 33 mW/°C above T_L = +25°C (1N5968, 1N5969, 1N6632 through 1N6637). 1/

P_T = 5 W at T_EC = +125°C, derate 100 mW/°C above T_EC = +125°C for US suffix devices.

−55°C < T_op < +175°C (ambient); −65°C < T_STG < +175°C (ambient).

Barometric pressure reduced (high attitude operation): 8 mm Hg.

Primary electrical characteristics are as shown in columns 2, 12, and 14 of table IV herein, and as follows:

R_ΘJL = 22°C/W(max) at L = .375 inch (9.53mm) (1N4954 through 1N4996). 1/

R_ΘJL = 30°C/W(max) at L = .375 inch (9.53 mm) (1N5968, 1N5969, 1N6632 through 1N6637). 1/

R_ΘJEC = 7°C/W (max) (surface mount) (1N4954 through 1N4996).

R_ΘJEC = 10°C/W (max) (surface mount) (1N5968, 1N5969, 1N6632 through 1N6637).

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.