UNLIMITED FREE
ACCESS TO THE WORLD'S BEST IDEAS

SUBMIT
Already a GlobalSpec user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your GlobalSpec Experience

Select Your Free Newsletters

Industry Newsletters

Select Your Free Product Alerts

Finish!
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

DLA - SMD-5962-89568 REV C

MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 4K X 9 FIFO, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 15 November 1993
Status: inactive
Page Count: 20
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 7204 4K × 9-bit parallel FIFO 120 ns 02 7204 4K × 9-bit parallel FIFO 80 ns 03 7204 4K × 9-bit parallel FIFO 65 ns 04 7204 4K × 9-bit parallel FIFO 50 ns 05 7204 4K × 9-bit parallel FIFO 40 ns 06 7204 4K × 9-bit parallel FIFO 30 ns 07 7204 4K × 9-bit parallel FIFO 20 ns

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X GDIP1-T8 or CDIP2-T28 28 Dual-in-line Y GDFP2-F28 28 Flat pack Z CQCC1-N32 28 Rectangular leadless chip carrier

The lead finish shall be as specified in MIL-M-38510. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Terminal voltage with respect to ground . . . . . . . . . −0.5 V dc to +7.0 V dc DC output current . . . . . . . . . . . . . . . . . . . . 50 mA Storage temperature range . . . . . . . . . . . . . . . . −65°C to +155°C Maximum power dissipation . . . . . . . . . . . . . . . . 1.0 W Lead temperature range (soldering, 10 seconds) . . . . . +260°C Thermal resistance, junction-to-case (θJC). . . . . . . . See MIL-STD-1835 Junction temperature (TJ) . . . . . . . . . . . . . . . . +150°C 1/

Supply voltage range (VCC) . . . . . . . . . . . . . . . +4.5 V to +5.5 V dc Minimum high level input voltage (VIH) . . . . . . . . . 2.2 V dc minimum 2/ Input low voltage (VIL) . . . . . . . . . . . . . . . . . 0.8 V dc maximum 3/ Case operating temperature range (TC) . . . . . . . . . . −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

SMD-5962-89568 REV N
June 15, 2023
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 4K X 9 FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Replaceability....
SMD 5962-89568
March 10, 2016
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 4K X 9 FIFO, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD 5962-89568
February 18, 2009
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 4K X 9 FIFO, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-89568 REV K
October 20, 2003
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 4K X 9 FIFO, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-89568 REV J
July 28, 2003
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 4K X 9 FIFO, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-89568 REV H
February 4, 2002
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 4K X 9 FIFO, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-89568 REV G
July 27, 2001
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 4K X 9 FIFO, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-89568 REV F
January 17, 2001
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 4K X 9 FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
SMD-5962-89568 REV E
January 21, 2000
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 4K X 9 FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
SMD-5962-89568 REV D
August 14, 1995
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 4K X 9 FIFO, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-89568 REV C
November 15, 1993
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 4K X 9 FIFO, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
SMD-5962-89568 REV B
February 13, 1992
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 4K X 9 FIFO, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-89568 REV A
December 9, 1991
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 4K X 9 FIFO, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-89568
November 8, 1989
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 4K X 9 FIFO, MONOLITHIC SILICON
A description is not available for this item.
View Less
View All

References

This document references:
MIL-STD-1835 - Electronic Component Case Outlines
Published by NPFC on September 21, 2009
This standard establishes and maintains a compilation of electronic component case outlines and should be useful to all levels of manufacturing that culminate in the production of reliable and...
This document references:
ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices
Published by ASTM on October 1, 2011
This guide defines the requirements and procedures for testing integrated circuits and other devices for the effects of single event phenomena (SEP) induced by irradiation with heavy ions having an...
This document references:
JEDEC JESD 78 - IC Latch-Up Test
Published by JEDEC on April 1, 2016
This standard covers the I-test and Vsupply overvoltage latch-up testing of integrated circuits. The purpose of this standard is to establish a method for determining IC latch-up characteristics and...
This document references:
MIL-HDBK-103 - LIST OF STANDARD MICROCIRCUIT DRAWINGS
Published by NPFC on March 8, 2021
Purpose. The Standard Microcircuit Drawing Program (SMDP) is directly under the auspices of the DoD Parts Management Program (PMP). The PMP is implemented by MIL-HDBK-512, "Parts Management." The PMP...
This document references:
MIL-HDBK-780D VALID NOTICE 1 - Standard Microcircuit Drawings
Published by DLA on December 28, 2021
A description is not available for this item.
This document references:
MIL-PRF-38535M - INTEGRATED CIRCUITS (MICROCIRCUITS) MANUFACTURING, GENERAL SPECIFICATION FOR
Published by DLA on November 1, 2022
Scope. This specification establishes the general performance requirements for integrated circuits or microcircuits and the quality and reliability assurance requirements, which are to be met for...
This document references:
MIL-STD-883 - TEST METHOD STANDARD MICROCIRCUITS
Published by NPFC on September 16, 2019
Purpose. This standard establishes uniform methods, controls, and procedures for testing microelectronic devices suitable for use within Military and Aerospace electronic systems including basic...
View Less
View All
Advertisement