DLA - SMD-5962-95650 REV B
MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 19 February 1999 |
| Status: | inactive |
| Page Count: | 28 |
Document History
July 17, 2000
MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Microcircuits covered by...
SMD-5962-95650 REV B
February 19, 1999
MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
October 22, 1997
MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
December 20, 1995
MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...