DLA - SMD-5962-95650 REV A
MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 22 October 1997 |
| Status: | inactive |
| Page Count: | 19 |
Document History
July 17, 2000
MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Microcircuits covered by...
February 19, 1999
MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-95650 REV A
October 22, 1997
MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
December 20, 1995
MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...