UNLIMITED FREE
ACCESS
TO THE WORLD'S BEST IDEAS

SUBMIT
Already a GlobalSpec user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your GlobalSpec Experience

Finish!
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

DLA - SMD-5962-87619 REV E

MICROCIRCUIT, LINEAR, POWER DRIVER, DUAL CHANNEL, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 30 September 1997
Status: inactive
Page Count: 13
scope:

This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and nontraditional performance environment (device class N). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following examples.

For device classes M or Q:

For device classes N or V:

Device classes N, Q, and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function 01 UC1707 Dual-channel power driver 02 UC2707 Dual-channel power driver

The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device.

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A N Certification and qualification to MIL-I-38535 with a non-traditional performance environment (encapsulated in plastic) Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style Document E GDIP1-T 16 or CDIP2-T 16 16 Dual-in-line MIL-STD-1835 2 CQCC1-N20 20 Square leadless chip carrier MIL-STD-1835 X MS-001 BB 16 Plastic dual-in-line JEDEC Publication 95

The lead finish is as specified in MIL-PRF-38535 for device classes N, Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage (VIN) ......................................................... +40 V dc Collector supply voltage (VC) ................................................ +40 V dc Output current (each output, source or sink): Steady state ............................................................... ±500 mA Peak transient ............................................................. ±1.0 A (for cases E and 2) ±1.5 A (for case X) Capacitive discharge energy ................................................ 15 µJ (for cases E and 2) 20 µJ (for case X) Digital inputs 2/ ............................................................ +5.5 V dc Analog stop inputs ........................................................... VIN V dc Power dissipation (PD): TA= +25°C .................................................................... 1 W (for cases E and 2) 3/ 2 W (for case X) TC= +25°C .................................................................... 2 W (for cases E and 2) 4/ 5 W (for case X) Storage temperature range (TS) ............................................... −65°C to +150°C Lead temperature (soldering, 10 seconds) ..................................... +300°C

Ambient operating temperature range (TA): Device type 01 ............................................................. −55°C to +125°C Device type 02 ............................................................. −25°C to +85°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

April 1, 2016
MICROCIRCUIT, LINEAR, POWER DRIVER, DUAL CHANNEL, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and Q), and nontraditional performance environment...
March 22, 2011
MICROCIRCUIT, LINEAR, POWER DRIVER, DUAL CHANNEL, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and Q), and nontraditional performance environment...
November 7, 2002
MICROCIRCUIT, LINEAR, POWER DRIVER, DUAL CHANNEL, MONOLITHIC SILICON
A description is not available for this item.
February 23, 1999
MICROCIRCUIT, LINEAR, POWER DRIVER, DUAL CHANNEL, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and nontraditional performance environment...
SMD-5962-87619 REV E
September 30, 1997
MICROCIRCUIT, LINEAR, POWER DRIVER, DUAL CHANNEL, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and nontraditional performance environment...
April 2, 1993
MICROCIRCUIT, LINEAR, POWER DRIVER, DUAL CHANNEL, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
August 10, 1992
MICROCIRCUIT, LINEAR, POWER DRIVER, DUAL CHANNEL, MONOLITHIC SILICON
A description is not available for this item.
November 27, 1991
MICROCIRCUIT, LINEAR, POWER DRIVER, DUAL CHANNEL, MONOLITHIC SILICON
A description is not available for this item.
December 10, 1987
MICROCIRCUIT, LINEAR, POWER DRIVER, DUAL CHANNEL, MONOLITHIC SILICON
A description is not available for this item.
July 13, 1987
MICROCIRCUIT, LINEAR, POWER DRIVER, DUAL CHANNEL, MONOLITHIC SILICON
A description is not available for this item.

References

Advertisement