DLA - SMD-5962-01518 REV B
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 32,000 GATES, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 20 December 2002 |
| Status: | inactive |
| Page Count: | 20 |
Document History
September 14, 2021
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 32,000 GATES, MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes...
May 1, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 32,000 GATES, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
October 30, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 32,000 GATES, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
March 25, 2003
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 32,000 GATES, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-01518 REV B
December 20, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 32,000 GATES, MONOLITHIC SILICON
A description is not available for this item.
November 22, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 32,000 GATES, MONOLITHIC SILICON
A description is not available for this item.
July 12, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 32,000 GATES, MONOLITHIC SILICON
A description is not available for this item.