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DLA - SMD-5962-87002 REV C

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 27 August 1990
Status: inactive
Page Count: 30
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 7132SA 2K × 8 dual port static RAM, MASTER 45 ns 02 7132SA 2K × 8 dual port static RAM, MASTER 90 ns 03 7132SA 2K × 8 dual port static RAM, MASTER 70 ns 04 7132SA 2K × 8 dual port static RAM, MASTER 55 ns 05 7132LA 2K × 8 dual port static RAM, MASTER 45 ns 06 7132LA 2K × 8 dual port static RAM, MASTER 90 ns 07 7132LA 2K × 8 dual port static RAM, MASTER 70 ns 08 7132LA 2K × 8 dual port static RAM, MASTER 55 ns 09 7142SA 2K × 8 dual port static RAM, SLAVE 45 ns 10 7142SA 2K × 8 dual port static RAM, SLAVE 90 ns 11 7142SA 2K × 8 dual port static RAM, SLAVE 70 ns 12 7142SA 2K × 8 dual port static RAM, SLAVE 55 ns 13 7142LA 2K × 8 dual port static RAM, SLAVE 45 ns 14 7142LA 2K × 8 dual port static RAM, SLAVE 90 ns 15 7142LA 2K × 8 dual port static RAM, SLAVE 70 ns 16 7142LA 2K × 8 dual port static RAM, SLAVE 55 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline X C-6 (52-terminal, .761" × .120", maximum), square leadless chip carrier Y Figure 1 (48-pin, 0.400" × 1.7"), small outline dual-in-line package Z D-14 (48-lead, 2.435" × .620" × .225"), dual-in-line package U Figure 1 (48-terminal, 0.550" × 0.550"), leadless chip carrier

Voltage on any pin with respect to ground 1/ - - - - −0.5 V to +7.0 V Storage temperature range - - - - - - - - - - - - - - −65°C to +150°C Power dissipation (PD)- - - - - - - - - - - - - - - - 1 W Lead temperature (soldering, 5 seconds) - - - - - - - +270°C Maximum junction temperature (TJ) 2/- - - - - - - - - +150°C

Thermal resistance, junction-to-case (θJC): Cases X and Z - - - - - - - - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Case Y - - - - - - - - - - - - - - - - - - - - - - - - - - - 23°C/W 3/ Case U - - - - - - - - - - - - - - - - - - - - - - - - - - - 24°C/W 3/ Maximum dc output current- - - - - - - - - - - - - - - - - - - 50 mA

Case operating temperature range (TC) - - - - - - - - - - - - - −55°C to +125°C Input low voltage (VIL) - - - - - - - - - - - - - - - - - - - - −0.5 to +0.8 V dc 4/ Input high voltage (VIH) - - - - - - - - - - - - - - - - - - - +2.2 V to VCC to +0.5 V dc 4/ Supply voltage (VCC)- - - - - - - - - - - - - - - - - - - - - - +4.5 V to +5.5 V dc 4/

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

SMD-5962-87002 REV G
July 28, 2021
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
SMD 5962-87002
April 3, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-87002 REV E
August 16, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-87002 REV D
September 6, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
SMD-5962-87002 REV C
August 27, 1990
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
SMD-5962-87002 REV B
January 22, 1990
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-87002 REV A
August 1, 1988
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-87002
January 19, 1988
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
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References

This document references:
MIL-STD-103 - ABBREVIATIONS (FOR ELECTRICAL AND ELECTRONIC USE)
Published by NAVY on May 18, 1953
This standard covers those abbreviations not presently covered in MIL-STD-12, Abbreviations for Use on Drawings. It is intended that the abbreviations in this standard plus the abbreviation for...
This document references:
MIL-STD-1835 - Electronic Component Case Outlines
Published by NPFC on September 21, 2009
This standard establishes and maintains a compilation of electronic component case outlines and should be useful to all levels of manufacturing that culminate in the production of reliable and...
This document references:
MIL-PRF-38535M - INTEGRATED CIRCUITS (MICROCIRCUITS) MANUFACTURING, GENERAL SPECIFICATION FOR
Published by DLA on November 1, 2022
Scope. This specification establishes the general performance requirements for integrated circuits or microcircuits and the quality and reliability assurance requirements, which are to be met for...
This document references:
MIL-STD-883 - TEST METHOD STANDARD MICROCIRCUITS
Published by NPFC on September 16, 2019
Purpose. This standard establishes uniform methods, controls, and procedures for testing microelectronic devices suitable for use within Military and Aerospace electronic systems including basic...
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