DLA - SMD-5962-89967
MIRCOCIRCUIT, MEMORY, DIGITAL, CMOS REGISTERED 8K X 8-BIT PROM, MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 10 February 1993 |
| Status: | inactive |
| Page Count: | 20 |
scope:
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and space application (device classes S and V) and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
The PIN shall be as shown in the following example:
Device classes M, B, and S RHA marked devices shall meet the MIL-M-38510 specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V devices shall meet or exceed the electrical performance characteristics specified in table I herein after exposure to the specified irradiation levels specified in the absolute maximum ratings herein and the RHA marked device shall be marked in accordance with MIL-I-38535. A dash (-) indicates a non-RHA device.
The device types shall identify the circuit function as follows:
Device type Generic number 1/ Circuit function Access time 01 8K × 8-bit registered PROM 60 ns 02 8K × 8-bit registered PROM 50 ns 03 8K × 8-bit registered PROM 25 ns 04 8K × 8-bit registered PROM 18 ns
The device class designator shall be a single letter identifying the product assurance level as follows:
Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 B or S Certification and qualification to MIL-M-38510 Q or V Certification and qualification to MIL-I-38535
The case outline(s) shall be as designated in MIL-STD-1835 and as follows:
Outline letter Descriptive designator Terminals Package style X CDIP3-T28 or GDIP4-T28 28 Dual-in-line package Y GDFP2-F28 28 Flat package 3 CQCC1-N28 28 Square leadless chip carrier package
The lead finish shall be as specified in MIL-M-38510 for classes M, B, and S or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.
Supply voltage range to ground potential (VCC) . . . . . −0.5 V dc to +7.0 V dc DC voltage applied to the outputs in the high Z state . . −0.5 V dc to +7.0 V dc DC input voltage . . . . . . . . . . . . . . . . . . . . −3.0 V dc to +7.0 V dc DC program voltage . . . . . . . . . . . . . . . . . . . 13.0 V dc Maximum power dissipation . . . . . . . . . . . . . . . . 1.0 W 3/ Lead temperature (soldering, 10 seconds) . . . . . . . . +260°C Thermal resistance, junction-to-case (θJC) . . . . . . . See MIL-STD-1835 Junction temperature (TJ) . . . . . . . . . . . . . . . . +175°C Storage temperature range (TSTG) . . . . . . . . . . . . −65°C to +150°C Temperature under bias . . . . . . . . . . . . . . . . . −55°C to +125°C
Supply voltage range (VCC) . . . . . . . . . . . . . . . +4.5 V dc minimum to +5.5 V dc maximum Ground voltage (GND) . . . . . . . . . . . . . . . . . . 0 V dc Input high voltage (VIH) . . . . . . . . . . . . . . . . 2.0 V dc minimum Input low voltage (VIL) . . . . . . . . . . . . . . . . . 0.8 V dc maximum Case operating temperature range (TC) . . . . . . . . . . −55°C to +125°C
Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) . . . . . . XX percent 4/
intended Use:
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original, equipment), design applications, and logistics purposes.
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