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NPFC - MIL-M-38510/765

MICROCIRCUITS, DIGITAL, ADVANCED CMOS, SHIFT REGISTERS, MONOLITHIC SILICON, POSITIVE LOGIC

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Organization: NPFC
Publication Date: 25 February 1991
Status: inactive
Page Count: 35
scope:

This specification covers the detail requirements for monolithic silicon, advanced CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness assurance (RHA) are provided and are reflected in the complete Part or Identifying Number (PIN).

The device types shall be as follows:

Device type Circuit 01 To be included after dating 02 To be included after dating 03 To be included after dating 04 To be included after dating 05 To be included after dating 06 8-bit bidirectional universal shift/storage register with three-state outputs 07 To be included after dating

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outlines shall be designated as follows:

Outline letter Case outline (see MIL-M-38510, appendix C) R D-8 (20-lead, 1.060" × .310" × .200"), dual-in-line package S F-9 (20-lead, .540" × .300" × .100"), flat package 2 C-2 (20 terminal, .358" × .358" × .100"), square chip carrier package

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441-5700 by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Supply voltage range (VCC) - - - - - - - - - - −0.5 V dc to +6.0 V dc DC input voltage range (VIN) - - - - - - - - - −0.5 V dc to VCC +0.5 V dc. DC output voltage range (VOUT) - - - - - - - - −0.5 V dc to VCC + 0.5 V dc Clamp diode current (IIK, IOK) - - - - - - - - ±20 mA DC output current (IOUT) - - - - - - - - - - - ±50 mA DC VCC or GND curtenet (ICC, IGND) - - - - - ±100 mA Storage temperature range (TSTG) - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - 300 mW Lead temperature (soldering, 10 seconds) - - - - +300°C Thermal resistance, junction-to-case (θJC) - - See MIL-M-38510, appendix C Junction temperature (TJ)- - - - - - - - - - - +175°C

Supply voltage range (VCC) - - - - - - - - - - +3.0 V dc to +5.5 V dc Output voltage range - - - - - - - - - - - - - - 0.0 V dc to VCC Case operating temperature range (TC) - - - - −55°C to +125°C Maximum low level input voltage (VIL) - - - - 0.90 V dc at VCC = 3.0 V dc 1.35 V dc at VCC = 4.5 V dc 1.65 V dc at VCC = 5.5 V dc Minimum high level input voltage (VIH) - - - - 2.10 V dc at VCC = 3.0 V dc 3.15 V dc at VCC = 4.5 V dc 3.85 V dc at VCC = 5.5 V dc Input rise and fall rate (tr, tf) maximum: VCC = 3.6 V, VCC = 5.5 V - - - - - - - - - 8 ns/V Minimum setup time, HIGH or LOW, Sn to CLK (ts1): Device type 06 VCC = 3.0 V dc; TC = +25°C, −55°C - - - - 8.5 ns TC = +125°C - - - - - - - - - - - - - - - - 9.5 ns VCC = 4.5 V dc; TC = +25°C, −55°C - - - - 6.0 ns TC = +125°C - - - - - - - - - - - - - - - - 7.0 ns

Minimum hold time, HIGH or LOW, Sn to CLK (th1): Device type 06 VCC = 3.0 V dc; TC = +25°C, −55°C - - - - - - - 2.0 ns TC = +125°C - - - - - - - - - - - - - - - - - - 2.0 ns VCC = 4.5 V dc; TC = +25°C, −55°C - - - - - - - 2.0 ns TC = +125°C - - - - - - - - - - - - - - - - - - 2.5 ns Minimum set up time, HIGH or LOW, I/On to CLK (ts2): Device type 06 VCC = 3.0 V dc; TC = +25°C, −55°C - - - - - - - 5.5 ns TC = +125°C - - - - - - - - - - - - - - - - - - 6.0 ns VCC = 4.5 V dc; TC = +25°C, −55°C - - - - - - - 3.5 ns TC = +125°C - - - - - - - - - - - - - - - - - - 4.0 ns Minimum hold time, HIGH or LOW, I/On to CLK (th2): Device type 06 VCC = 3.0 V dc; TC = +25°C, −55°C - - - - - - - 1.5 ns TC = +125°C - - - - - - - - - - - - - - - - - - 1.5 ns VCC = 4.5 V dc; TC = +25°C, −55°C - - - - - - - 2.0 ns TC = +125°C - - - - - - - - - - - - - - - - - - 2.0 ns Minimum setup time, HIGH or LOW, DS0 or DS7 to Device type 06 to CLK (ts3): VCC = 3.0 V dc; TC = +25°C, −55°C - - - - - - - 6.5 ns TC = +125°C - - - - - - - - - - - - - - - - - - 7.5 ns VCC = 4.5 V dc; TC = +25°C, −55°C - - - - - - - 4.0 ns TC = +125°C - - - - - - - - - - - - - - - - - - 5.0 ns Minimum hold time, HIGH or LOW, DSO or DS7 to Device type 06 CLK (th3): VCC = 3.0 V dc; TC = +25°C, −55°C - - - - - - - 1.0 ns TC = +125°C - - - - - - - - - - - - - - - - - - 1.5 ns VCC = 4.5 V dc; TC = +25°C, −55°C - - - - - - - 1.5 ns TC = +125°C - - - - - - - - - - - - - - - - - - 1.5 ns Minimum CLK pulse width (tw1), HIGH or LOW: Device type 06 VCC = 3.0 V dc; TC = +25°C, −55°C - - - - - - - 5.0 ns TC = +125°C - - - - - - - - - - - - - - - - - - 5.5 ns VCC = 4.5 V dc; TC = +25°C, −55°C - - - - - - - 5.0 ns TC = +125°C - - - - - - - - - - - - - - - - - - 5.0 ns Minimum [M bar][R bar] pulse width (tw2), LOW: Device type 06 VCC = 3.0 V dc; TC = +25°C, −55°C - - - - - - - 5.0 ns TC = +125°C - - - - - - - - - - - - - - - - - - 5.5 ns VCC = 4.5 V dc; TC = +25°C, −55°C - - - - - - - 5.0 ns TC = +125°C - - - - - - - - - - - - - - - - - - 5.0 ns Minimum recovery time (trec), [M bar][R bar] to CLK: Device type 06 VCC = 3.0 V dc; TC = +25°C, −55°C - - - - - - - 2.5 ns TC = +125°C - - - - - - - - - - - - - - - - - - 2.5 ns VCC = 4.5 V dc; TC = +25°C, −55°C - - - - - - - 2.5 ns TC = +125°C - - - - - - - - - - - - - - - - - - 2.5 ns

Document History

January 13, 2015
Microcircuits, Digital, Advanced CMOS, Shift Registers, Monolithic Silicon, Positive Logic
A description is not available for this item.
March 22, 2010
Microcircuits, Digital, Advanced CMOS, Shift Registers, Monolithic Silicon, Positive Logic
This specification covers the detail requirements for monolithic silicon, advanced CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation...
June 9, 2005
MICROCIRCUITS, DIGITAL, ADVANCED CMOS, SHIFT REGISTERS, MONOLITHIC SILICON, POSITIVE LOGIC
This specification covers the detail requirements for monolithic silicon, advanced CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation...
March 19, 2003
MICROCIRCUITS, DIGITAL, ADVANCED CMOS, SHIFT REGISTERS, MONOLITHIC SILICON, POSITIVE LOGIC
A description is not available for this item.
June 15, 1998
MICROCIRCUITS, DIGITAL, ADVANCED CMOS, SHIFT REGISTERS, MONOLITHIC SILICON, POSITIVE LOGIC
A description is not available for this item.
March 26, 1998
MICROCIRCUITS, DIGITAL, ADVANCED CMOS, SHIFT REGISTERS, MONOLITHIC SILICON, POSITIVE LOGIC
A description is not available for this item.
August 9, 1996
MICROCIRCUITS, DIGITAL, ADVANCED CMOS, SHIFT REGISTERS, MONOLITHIC SILICON, POSITIVE LOGIC
A description is not available for this item.
MIL-M-38510/765
February 25, 1991
MICROCIRCUITS, DIGITAL, ADVANCED CMOS, SHIFT REGISTERS, MONOLITHIC SILICON, POSITIVE LOGIC
This specification covers the detail requirements for monolithic silicon, advanced CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation...

References

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