DOD - SMD 5962-99573
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 661,111 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
inactive
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| Organization: | DOD |
| Publication Date: | 24 September 2014 |
| Status: | inactive |
| Page Count: | 42 |
scope:
This drawing documents two product assurance class levels consisting high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
October 26, 2020
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 661,111 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
Scope.
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device class Q), and nontraditional performance environment...
SMD 5962-99573
September 24, 2014
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 661,111 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
December 8, 2008
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 661,111 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and Q), and nontraditional performance environment...
August 28, 2003
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 661,111 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
A description is not available for this item.
September 2, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 661,111 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
A description is not available for this item.