JEDEC JESD 90
A Procedure for Measuring P-Channel MOSFET Negative Bias Temperature Instabilities
Organization: | JEDEC |
Publication Date: | 1 November 2004 |
Status: | active |
Page Count: | 20 |
scope:
This document describes an accelerated stress and test methodology for measuring device parameter changes of a single p-channel MOSFET after Negative Bias Temperature Instability (NBTI) stress at dc bias conditions. This document gives a procedure to investigate NBTI stress in a symmetric voltage condition with the channel inverted (VGS < 0) and no channel conduction (VDS = 0).There can be NBTI degradation during channel conduction (VGS < 0, VDS < 0), however, this document does not cover this phenomena.