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DOD - SMD 5962-90696

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256 x 4 STATIC RANDOM ACCESS MEMORY (SRAM) WITH SEPARATE I/O, MONOLITHIC SILICON

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Organization: DOD
Publication Date: 12 February 2018
Status: active
Page Count: 18
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

SMD 5962-90696
February 12, 2018
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256 x 4 STATIC RANDOM ACCESS MEMORY (SRAM) WITH SEPARATE I/O, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
November 16, 2011
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256 x 4 STATIC RANDOM ACCESS MEMORY (SRAM) WITH SEPARATE I/O, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
March 4, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256 X 4 STATIC RANDOM ACCESS MEMORY (SRAM) WITH SEPERATE I/O, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...

References

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