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DOD - SMD 5962-87549

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON

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Organization: DOD
Publication Date: 27 February 2018
Status: active
Page Count: 26
scope:

This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes

Document History

SMD 5962-87549
February 27, 2018
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
April 13, 2015
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
January 6, 2015
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
December 12, 2013
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
November 24, 2008
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
February 16, 2007
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
October 1, 2003
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
March 23, 2001
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
June 25, 1993
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
March 23, 1993
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
November 16, 1987
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
April 29, 1987
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.

References

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