NPFC - MIL-PRF-19500/630
TRANSISTOR , FIELD EFFECT, RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7389 AND 2N7390, JANTXV, R, AND F AND JANS, R, AND F
active, Most Current
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| Organization: | NPFC |
| Publication Date: | 9 October 2018 |
| Status: | active |
| Page Count: | 22 |
scope:
This specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV and JANS product assurance levels. See 6.6 for JANHC and JANKC die versions.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/630
October 9, 2018
TRANSISTOR , FIELD EFFECT, RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7389 AND 2N7390, JANTXV, R, AND F AND JANS, R, AND F
This specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor. Two levels of product assurance (JANTXV and JANS) are provided...
November 3, 2016
Semiconductor Device, Field Effect, Radiation Hardened Transistor, P-Channel, Silicon, Types 2N7389, 2N7390, 2N7389U, 2N7389U5, and 2N7390U, 2N7390U5, JANTXV, R, and F and JANS, R, and F
A description is not available for this item.
January 27, 2012
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, 2N7389U5, AND 2N7390U, 2N7390U5, JANTXV, R, AND F AND JANS, R, AND F
This specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor. Two levels of product assurance are provided for each device...
December 19, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, AND 2N7390U, JANTXV, R, AND F AND JANS, R, AND F
This specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor. Two levels of product assurance are provided for each device...
March 30, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, AND 2N7390U, JANTXV, R, AND F AND JANS, R, AND F
This specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor. Two levels of product assurance are provided for each device...
November 7, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, AND 2N7390U, JANTXV, R, AND F AND JANS, R, AND F
This specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor. Two levels of product assurance are provided for each device...
April 5, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, AND 2N7390U, JANTXV, R, AND F AND JANS, R, AND F
A description is not available for this item.
December 22, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, AND 2N7390U, JANTXV, R, AND F AND JANS, R, AND F
This specification covers the performance requirements for a P-channel, Radiation Hardened, enhancement mode, MOSFET, power transistor. Two levels of product assurance are provided for each device...
May 2, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389 AND 2N7390 JANTXV M, D, R, AND F AND JANS M, D, R, AND F
This specification covers the performance requirements for a P-channel, Radiation Hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications....
November 8, 1996
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389 AND 2N7390 JANTXV, M, D AND R AND JANS M, D AND R
A description is not available for this item.
May 10, 1996
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389 AND 2N7390 JANTXV M, D AND R AND JANS M, D AND R
This specification covers the detail requirements for a P-channel, Radiation Hardened, enhancement mode. MOSFET, power transistor intended for use in high density power switching applications. Two...