NPFC - MIL-PRF-19500/595
TRANSISTOR, REPETITIVE AVALANCHE, FIELD EFFECT, P-CHANNEL, SILICON, TYPES 2N7236, AND 2N7237, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
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| Organization: | NPFC |
| Publication Date: | 30 January 2019 |
| Status: | active |
| Page Count: | 23 |
scope:
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device, and two levels of product assurance (JANHC and JANKC) for each unencapsulated device, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR).
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/595
January 30, 2019
TRANSISTOR, REPETITIVE AVALANCHE, FIELD EFFECT, P-CHANNEL, SILICON, TYPES 2N7236, AND 2N7237, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
November 7, 2018
Semiconductor Device, Repetitive Avalanche, Field Effect, Transistor, P-Channel, Silicon, Types 2N7236, 2N7237, 2N7236U, and 2N7237U, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
A description is not available for this item.
November 20, 2013
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
October 25, 2010
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
April 22, 2009
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
June 26, 2006
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
October 25, 2004
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
September 2, 2003
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
August 13, 2002
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
July 2, 1998
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
February 18, 1997
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
August 26, 1996
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
September 25, 1995
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
April 27, 1995
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N723ó, 217237, 2N72W, AND 2N723N JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product...
November 22, 1993
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N723ó, 217237, 2N7236U, 2N7237U, JANTX, JANTXV, JANS, AND JANC
A description is not available for this item.
September 1, 1992
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N723ó, 2N7237, 2N7236U, 2N7237U, JANTX, JANTXV, JANS, AND JANC
This specification covers the detail requirements for a P-channel, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product...
February 15, 1991
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON TYPES 2N723ó, 2N7237, JANTX, JANTXV, AND JANS
A description is not available for this item.