DOD - SMD 5962-99572
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 322,970 GATES, RADIATION HARDENED PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
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| Organization: | DOD |
| Publication Date: | 19 May 2020 |
| Status: | active |
| Page Count: | 45 |
scope:
Scope.
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device class Q), and nontraditional performance environment (device class N). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class N, the user is cautioned to assure that the device is appropriate for the application environment.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
SMD 5962-99572
May 19, 2020
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 322,970 GATES, RADIATION HARDENED PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
Scope.
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device class Q), and nontraditional performance environment...
September 19, 2014
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 322,970 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
December 8, 2008
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 322,970 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and Q), and nontraditional performance environment...
August 28, 2003
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 322,970 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
A description is not available for this item.
September 2, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 322,970 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
A description is not available for this item.