DLA - SMD-5962-99572
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 322,970 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 2 September 2002 |
| Status: | inactive |
| Page Count: | 45 |
Document History
May 19, 2020
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 322,970 GATES, RADIATION HARDENED PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
Scope.
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device class Q), and nontraditional performance environment...
September 19, 2014
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 322,970 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
December 8, 2008
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 322,970 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and Q), and nontraditional performance environment...
August 28, 2003
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 322,970 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-99572
September 2, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 322,970 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
A description is not available for this item.