DOD - SMD 5962-20202
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION-HARDENED, 1M X 16 BIT (16 M), 3.3 V, STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
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| Organization: | DOD |
| Publication Date: | 10 April 2020 |
| Status: | active |
| Page Count: | 26 |
scope:
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics... View More
Document History
October 26, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION-HARDENED, 1M X 16 BIT (16 M), 3.3 V, STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
SMD 5962-20202
April 10, 2020
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION-HARDENED, 1M X 16 BIT (16 M), 3.3 V, STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes...