DOD - SMD 5962-96532
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, 4-WIDE 2-INPUT AND-OR-INVERT GATE, MONOLITHIC SILICON
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| Organization: | DOD |
| Publication Date: | 21 December 2020 |
| Status: | active |
| Page Count: | 15 |
scope:
Scope.
This drawing documents two product assurance class levels consisting of high reliability device class Q and space application device class V. A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics... View More
Document History
SMD 5962-96532
December 21, 2020
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, 4-WIDE 2-INPUT AND-OR-INVERT GATE, MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability device class Q and space application device class V. A choice of case outlines and lead finishes are...
October 23, 2013
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, 4-WIDE 2-INPUT AND-OR-INVERT GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability device class Q and space application device class V. A choice of case outlines and lead finishes are available...
November 21, 2007
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, 4-WIDE 2-INPUT AND-OR-INVERT GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
September 4, 2001
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 4-WIDE 2-INPUT AND-OR-INVERT GATE, MONOLITHIC SILICON
A description is not available for this item.
December 12, 1996
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 4-WIDE 2-INPUT AND-OR-INVERT GATE, MONOLITHIC SILICON
A description is not available for this item.
April 5, 1996
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 4-WIDE 2-INPUT AND-OR-INVERT GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...