NPFC - MIL-PRF-19500/156
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, AND 1N940B-1, LEADED AND SURFACE MOUNT PACKAGES, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY)
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| Organization: | NPFC |
| Publication Date: | 19 January 2021 |
| Status: | active |
| Page Count: | 15 |
scope:
Scope.
This specification covers the performance requirements for 9.0 volts ±5 percent, silicon, low bias current, temperature compensated voltage-reference diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500. Seven levels of radiation hardened (total ionizing dose only) product assurance are provided for quality levels JANTXV and JANS as specified in MIL-PRF-19500.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/156
January 19, 2021
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, AND 1N940B-1, LEADED AND SURFACE MOUNT PACKAGES, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY)
Scope.
This specification covers the performance requirements for 9.0 volts ±5 percent, silicon, low bias current, temperature compensated voltage-reference diodes. Four levels of product assurance...
January 16, 2019
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, AND 1N940B-1, LEADED AND SURFACE MOUNT PACKAGES, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY)
This specification covers the performance requirements for 9.0 volts ±5 percent, silicon, low bias current, temperature compensated voltage-reference diodes. Four levels of product assurance (JAN,...
January 17, 2017
Semiconductor Device, Diode, Silicon, Low Level Voltage- Reference Temperature Compensated, Types 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, and 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, and 1N940BUR-1, JAN, JANTX, JANTXV, and JANS, Radiation Hardened (Total Dose Only) Types JANTXVM, D, L, R, F, G, H, JANSM, D, L, R, F, G, H
A description is not available for this item.
March 13, 2012
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, AND 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, AND 1N940BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H, JANSM, D, L, R, F, G, H
This specification covers the performance requirements for 9.0 volts ±5 percent, silicon, low bias current, voltage-reference diodes. Four levels of product assurance are provided for each...
March 18, 2008
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, AND 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, AND 1N940BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H, JANSM, D, L, R, F, G, H
This specification covers the performance requirements for 9.0 volts ±5 percent, silicon, low bias current, voltage-reference diodes. Four levels of product assurance are provided for each...
July 1, 2004
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, AND 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, AND 1N940BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H, JANSM, D, L, R, F, G, H
This specification covers the performance requirements for 9.0 volts ±5 percent, silicon, low bias current, voltage-reference diodes. Four levels of product assurance are provided for each...
September 18, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, AND 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, AND 1N940BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H, JANSM, D, L, R, F, G, H
This specification covers the performance requirements for 9.0 volts ±5 percent, silicon, low bias current, voltage-reference diodes. Four levels of product assurance are provided for each...
April 12, 2001
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, AND 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, AND 1N940BUR-1, JAN, JANTX, JANTXV, JANJ, AND JANS; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H
A description is not available for this item.
July 20, 1999
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TYPES 1N935B-1, 1N937B-1,1N938B-1, 1N939B-1, AND 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, AND 1N940BUR-1, JAN, JANTX, JANTXV, JANJ, AND JANS; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H
This specification covers the performance requirements for 9.0 volts ±5 percent, silicon, low bias current, voltage-reference diodes. Five levels of product assurance are provided for each...
November 25, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N935B, 1N937B, 1N938B, 1N9398, 1N940B, AND 1N935B-1, 1N937B-1, 1N9388-1, 1N939B-1, ANO 1N94OB-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, AND 1N940BUR-1, JAN, JANTX, JANTXV AND JANS; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, H
This specification covers the detail requirements for 9.0 volts ±5 percent, silicon, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as...
November 23, 1992
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N935B, 1N937B, 1N938B, 1N939B, 1N940B, 1N935B-1, 1N937B-1, 1N939B-1, 1N940B-1, 1N935BUR-1, 1N938BUR-1, 1N939BUR-1, 1N940BUR-1, JANTX, JANTXV, AND JANS
This specification covers the detail requirements for 9.00 volts ±5 percent, silicon, voltage-reference diodes. Three levels of product assurance are provided for each device type as specified in...
August 25, 1990
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N935B, 1N937B, 1N938B, 1N939B, 1N940B, 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, 1N940BUR-1, JANTX, JANTXV, AND JANS
A description is not available for this item.
October 7, 1985
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N935B, 1N937B, 1N938B, 1N939B, 1N940B, 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, 1N940B-1, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
January 25, 1978
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N935B, 1N937B, 1N938B, 1N939B, lN940B, TX AND TXV
A description is not available for this item.
October 10, 1973
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, AND 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, AND 1N940BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H, JANSM, D, L, R, F, G, H
A description is not available for this item.
January 31, 1973
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N935B, 1N937B, 1N938B, 1N939B, 1N940B, TX AND TXV
A description is not available for this item.
November 24, 1972
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N935B, 1N937B, 1N938B, 1N939B, 1N940B, TX AND TXV
A description is not available for this item.
February 1, 1972
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N935B, 1N937B, 1N938B, 1N939B, 1N940B, TX1N935B, TX1N937B, TX1N938B, TX1N939B, AND TX1N940B
A description is not available for this item.
August 19, 1970
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REFERENCE TYPES 1N935B, 1N937B, 1N938B, AND 1N940B TX AND NON-TX
A description is not available for this item.
May 6, 1968
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N935B, 1N937B, 1N938B, 1N939B, 1N940B TX AND NON-TX
A description is not available for this item.
June 2, 1967
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N935B, 1N937B, 1N938B, 1N939B, 1N940B, TX1N935B, TX1N937B, TX1N938B, TX1N939B, AND TX1N940B
A description is not available for this item.
November 18, 1965
SEMICONDUCTOR DEVICE, DIODE, SILICON TYPES 1N935B, 1N937B, 1N938B AND 1N939B
A description is not available for this item.
July 29, 1964
SEMICONDUCTOR DEVICE, DIODE, SILICON TYPES 1N935B, 1N937B, 1N938B AND 1N939B
A description is not available for this item.
October 21, 1963
SEMICONDUCTOR DEVICE, DIODE, SILICON TYPES 1N935B, 1N937B, 1N938B AND 1N939B
A description is not available for this item.
October 30, 1962
SEMICONDUCTOR DEVICE, DIODE, SILICON TYPES 1N935B, 1N937B, 1N938B, AND 1N939B
A description is not available for this item.