NPFC - MIL-PRF-19500/159
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, ENCAPSULATED (AXIAL LEADED AND SURFACE MOUNT PACKAGE) AND UN-ENCAPSULATED, RADIATION HARDENED (TOTAL DOSE ONLY), QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC AND JANKC;
active, Most Current
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| Organization: | NPFC |
| Publication Date: | 16 March 2021 |
| Status: | active |
| Page Count: | 20 |
scope:
Scope.
This specification covers the performance requirements for 6.2 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance (JANHC and JANKC) are provided for each un-encapsulated device type. Seven levels of radiation hardened assurance (total dose only) are provided for quality levels JANTXV, JANS, JANHC and JANKC devices as specified in MIL-PRF-19500.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/159
March 16, 2021
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, ENCAPSULATED (AXIAL LEADED AND SURFACE MOUNT PACKAGE) AND UN-ENCAPSULATED, RADIATION HARDENED (TOTAL DOSE ONLY), QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC AND JANKC;
Scope.
This specification covers the performance requirements for 6.2 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance (JAN, JANTX,...
August 9, 2019
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, ENCAPSULATED (AXIAL LEADED AND SURFACE MOUNT PACKAGE) AND UN-ENCAPSULATED, RADIATION HARDENED (TOTAL DOSE ONLY), QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC AND JANKC
Scope.
This specification covers the performance requirements for 6.2 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance (JAN, JANTX,...
January 19, 2019
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY)
This specification covers the performance requirements for 6.2 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and...
January 17, 2017
Semiconductor Device, Diode, Silicon, Temperature Compensated, Voltage-Reference, Types 1N821-1, 1N823-1, 1N825-1, 1N827-1, and 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, and 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC and JANKC; Radiation Hardened (Total Dose Only) Types JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; and JANKCM, D, L, R, F, G, H
A description is not available for this item.
March 1, 2012
SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED, VOLTAGE-REFERENCE, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
This specification covers the performance requirements for 6.2 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each...
February 4, 2009
SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED, VOLTAGE-REFERENCE, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
This specification covers the performance requirements for 6.2 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each...
April 1, 2008
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
This specification covers the performance requirements for 6.2 volts ± 5 percent, silicon, voltage-reference, temperature compensated diodes. Four levels of product assurance are provided for each...
July 1, 2004
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
This specification covers the performance requirements for 6.2 volts ± 5 percent, silicon, voltage-reference, temperature compensated diodes. Four levels of product assurance are provided for each...
September 18, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
This specification covers the performance requirements for 6.2 volts ±5 percent, silicon, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as...
March 17, 2000
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1 N821-1, 1 N823-1, 1 N825-1, 1 N827-1, AND 1 N829-1, 1 N821 UR-I, 1 N823UR-1, 1 N825UR-1, 1 N827UR-1, AND 1 N829UR-1, JAN, JANTX, JANTXV, JANJ, JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
A description is not available for this item.
November 19, 1999
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANJ, JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
This specification covers the performance requirements for 6.2 volts ± 5 percent, silicon, voltage-reference diodes. Five levels of product assurance are provided for each encapsulated device type as...
July 1, 1998
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TYPES 1N821-1, 1N823-1, lN825-1, 1N827-1, AND 1N829-1, lN821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, 0, L, R, F, G, H
This specification covers the performance requirements for 6.2 volts ± 5 percent, silicon, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as...
May 16, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TYPES 1N821, 11823, 11825, 1N827, 11829, AND 1N821-1, 111823-1, 11825-1, 1N827-1, AND 1N829-1, 1N821UR-1, lN823UR-1, 1N825UR-1, 1N82NR-1, AND 1N82WR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, Dl LI RI FI GI H; JANSM, Dl LI RI F I GI H; JANHCII, Dl LI RI FI GI H; AND JANKCM, Dl LI RI F I GI H
This specification covers the detail requirements for 6.2 volts ±5 percent, silicon, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as...
March 8, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N821, 1N823, 1N825, 1N827, 1N829, AND 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JANTX, JANTXV, JANS, AND JANC .
A description is not available for this item.
January 22, 1993
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N821, 1N823, 1N825, 1N827, 1N829, AND 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, IN827UR-1, AND IN829UR-1, JANTX, JANTXV, JANS, AND JANC
This specification covers the detail requirements for 6.2 volts ±5 percent, silicon, voltage-reference diodes. Four levels of product assurance are provided for each device type as specified in...
May 15, 1992
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, types 1n821, 1n825, and 1n829, 1n821-1, 1n823-1, 1n825-1, 1n827-1, and 1n829-1, 1n821ur-1, 1n823ur-1, 1n823ur-1, 1n825ur-1, 1n827ur-1 and 1n829ur-1, jantx, jantxv, jans, and janc
A description is not available for this item.
January 25, 1991
SEMICONDUCTOR DEVICE. DIODE. SILICON. VOLTAGE-REFERENCE TYPES 1N821, 1N823, 1N825, 11827, AND lN829,'1N821-1, lN823-1, 1N825-1, JANTX, JANTXV, AND JANS 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1,
A description is not available for this item.
December 2, 1985
SEMICONDUCTOR D E V I C E , DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N821, 1N823, 1N825, 1N827, 1N829, AND 1N821-1, 1N823-1, 1N825-1, 11827-1, 1N829-1, JAN, JANTX, JANTXV, AND JANS.
A description is not available for this item.
September 29, 1980
SEMICONDUCTOR DEVICE , DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N821, 1N823, 1N825, 1N827, 1N829, TX and TXV
A description is not available for this item.
January 25, 1978
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N821, 1N823, 1N825, 1N827, 1N829, TX AND TXV
A description is not available for this item.
October 11, 1973
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N821, 11823. 1N825, 13827, 13829, TX AND TXV
A description is not available for this item.
January 31, 1973
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE -REFERENCE TYPES 1N821, 1N823, 1N825, 1N827, 1N829, TXANDTXV
A description is not available for this item.
December 12, 1972
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N821, 1N823, 1N825, 1N827, 1N829, TX AND TXV
A description is not available for this item.
February 1, 1972
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N821, 1N823, 1N825, 1N827, 1N829, TX1N821, TX1N823, TX1N827, AND TX1N829
A description is not available for this item.
March 17, 1970
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES lN821,1N823,1N825,1N827,1N829 TXlN821, TXlN823, TXlN825, TXlN827, AND TXlN829
A description is not available for this item.