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DLA - SMD-5962-94510 REV C

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASEABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON

active, Most Current
Organization: DLA
Publication Date: 11 June 2021
Status: active
Page Count: 19
scope:

Scope.

This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics... View More

Document History

SMD-5962-94510 REV C
June 11, 2021
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASEABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Replaceability....
December 1, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASEABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
This draw ing documents tw o product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes...
April 2, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASEABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
April 21, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...

References

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