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DLA - SMD-5962-91612 REV D

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

active, Most Current
Organization: DLA
Publication Date: 22 February 2022
Status: active
Page Count: 29
scope:

Scope.

This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics... View More

Document History

SMD-5962-91612 REV D
February 22, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Replaceability....
July 2, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
November 1, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
November 29, 1995
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q, and M) and...
October 19, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.

References

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