DLA - SMD-5962-22210
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, LOW POWER REPROGRAMMABLE 481,000 LOGIC ELEMENT FLASH FIELD PROGRAMMABLE GATE ARRAY WITH DECOUPLING CAPACITORS, FLIP CHIP Pb FREE BUMP, MONOLITHIC SILICON
active, Most Current
| Organization: | DLA |
| Publication Date: | 1 September 2023 |
| Status: | active |
| Page Count: | 57 |
scope:
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics... View More
Document History
SMD-5962-22210
September 1, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, LOW POWER REPROGRAMMABLE 481,000 LOGIC ELEMENT FLASH FIELD PROGRAMMABLE GATE ARRAY WITH DECOUPLING CAPACITORS, FLIP CHIP Pb FREE BUMP, MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes...