DOD - SMD 5962-02530
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 3M GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
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| Organization: | DOD |
| Publication Date: | 29 October 2014 |
| Status: | active |
| Page Count: | 39 |
scope:
This drawing documents two product assurance class levels consisting high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
SMD 5962-02530
October 29, 2014
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 3M GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
April 25, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 3M GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting high reliability (device classes Q and M) and space application (device class V. A choice of case outlines and lead finishes are...