DOD - SMD 5962-08220
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1M X 16 (16M) 3.3 V, STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
active, Most Current
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| Organization: | DOD |
| Publication Date: | 12 August 2016 |
| Status: | active |
| Page Count: | 21 |
scope:
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
November 15, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1M X 16 (16M) 3.3 V, STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Replaceability....
SMD 5962-08220
August 12, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1M X 16 (16M) 3.3 V, STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
January 21, 2009
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1M X 16 (16M) 3.3 V, STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...