DOD - SMD 5962-08220
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1M X 16 (16M) 3.3 V, STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
inactive
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| Organization: | DOD |
| Publication Date: | 21 January 2009 |
| Status: | inactive |
| Page Count: | 21 |
scope:
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
November 15, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1M X 16 (16M) 3.3 V, STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Replaceability....
August 12, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1M X 16 (16M) 3.3 V, STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD 5962-08220
January 21, 2009
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1M X 16 (16M) 3.3 V, STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...