DOD - SMD 5962-15212
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2M x 32- BIT (64M), RADIATION-HARDENED, PIPELINED, SYNCHRONOUS SRAM (SSRAM), MONOLITHIC SILICON
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| Organization: | DOD |
| Publication Date: | 3 April 2017 |
| Status: | inactive |
| Page Count: | 28 |
scope:
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
February 14, 2019
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2M x 32- BIT (64M), RADIATION-HARDENED, PIPELINED, SYNCHRONOUS SRAM (SSRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
July 14, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2M x 32- BIT (64M), RADIATION-HARDENED, PIPELINED, SYNCHRONOUS SRAM (SSRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
SMD 5962-15212
April 3, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2M x 32- BIT (64M), RADIATION-HARDENED, PIPELINED, SYNCHRONOUS SRAM (SSRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...