NPFC - MIL-PRF-19500/713
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, P-CHANNEL, SILICON, DEVICE TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
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| Organization: | NPFC |
| Publication Date: | 20 September 2017 |
| Status: | inactive |
| Page Count: | 23 |
scope:
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications. See 6.7 for JANHC and JANKC die versions.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
November 18, 2021
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, P-CHANNEL, SILICON, DEVICE TYPES 2N7549, AND 2N7550, JANTXVR, F AND JANSR, F
A description is not available for this item.
October 22, 2021
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, P-CHANNEL, SILICON, DEVICE TYPES 2N7549, AND 2N7550, JANTXVR, F AND JANSR, F
Scope.
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
January 8, 2021
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, P-CHANNEL, SILICON, DEVICE TYPES 2N7549, AND 2N7550, JANTXVR, F AND JANSR, F
Scope
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
April 3, 2020
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, P-CHANNEL, SILICON, DEVICE TYPES 2N7549, AND 2N7550, JANTXVR, F AND JANSR, F
Scope.
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
September 3, 2019
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, P-CHANNEL, SILICON, DEVICE TYPES 2N7549, AND 2N7550, JANTXVR, F AND JANSR, F
Scope.
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
November 19, 2018
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, P-CHANNEL, SILICON, DEVICE TYPES 2N7549, AND 2N7550, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
April 25, 2018
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, P-CHANNEL, SILICON, DEVICE TYPES 2N7549, AND 2N7550, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
MIL-PRF-19500/713
September 20, 2017
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, P-CHANNEL, SILICON, DEVICE TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
December 16, 2016
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED P-CHANNEL, SILICON, DEVICE TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
April 3, 2015
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED P-CHANNEL, SILICON, DEVICE TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
December 18, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
November 9, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
June 4, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
April 28, 2005
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...