NPFC - MIL-PRF-19500/713
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, P-CHANNEL, SILICON, DEVICE TYPES 2N7549, AND 2N7550, JANTXVR, F AND JANSR, F
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| Organization: | NPFC |
| Publication Date: | 3 April 2020 |
| Status: | inactive |
| Page Count: | 33 |
scope:
Scope.
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications. Provisions for radiation hardness assurance (RHA) to two radiation levels "R" or "F" are provided for JANS and JANTXV product assurance levels. See 6.7 for JANHC and JANKC die versions.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
November 18, 2021
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, P-CHANNEL, SILICON, DEVICE TYPES 2N7549, AND 2N7550, JANTXVR, F AND JANSR, F
A description is not available for this item.
October 22, 2021
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, P-CHANNEL, SILICON, DEVICE TYPES 2N7549, AND 2N7550, JANTXVR, F AND JANSR, F
Scope.
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
January 8, 2021
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, P-CHANNEL, SILICON, DEVICE TYPES 2N7549, AND 2N7550, JANTXVR, F AND JANSR, F
Scope
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
MIL-PRF-19500/713
April 3, 2020
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, P-CHANNEL, SILICON, DEVICE TYPES 2N7549, AND 2N7550, JANTXVR, F AND JANSR, F
Scope.
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
September 3, 2019
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, P-CHANNEL, SILICON, DEVICE TYPES 2N7549, AND 2N7550, JANTXVR, F AND JANSR, F
Scope.
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
November 19, 2018
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, P-CHANNEL, SILICON, DEVICE TYPES 2N7549, AND 2N7550, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
April 25, 2018
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, P-CHANNEL, SILICON, DEVICE TYPES 2N7549, AND 2N7550, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
September 20, 2017
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, P-CHANNEL, SILICON, DEVICE TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
December 16, 2016
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED P-CHANNEL, SILICON, DEVICE TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
April 3, 2015
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED P-CHANNEL, SILICON, DEVICE TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
December 18, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
November 9, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
June 4, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
April 28, 2005
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...