NPFC - MIL-PRF-19500/741
TRANSISTOR, DIE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
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| Organization: | NPFC |
| Publication Date: | 13 April 2018 |
| Status: | inactive |
| Page Count: | 19 |
scope:
This specification covers the performance requirements for N-channel and P-channel, enhancementmode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor die. Two levels of product assurance (JANHC and JANKC) are provided for each device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance (RHA) to four radiation levels ("G", "H", "R" and "F") are provided for JANTXV and JANS product assurance levels.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
November 18, 2019
TRANSISTOR, DIE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
Scope.
This specification covers the performance requirements for N-channel and P-channel, enhancementmode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor...
MIL-PRF-19500/741
April 13, 2018
TRANSISTOR, DIE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
This specification covers the performance requirements for N-channel and P-channel, enhancementmode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor die. Two...
January 30, 2009
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
This specification covers the performance requirements for N-channel and P-channel, enhancementmode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor die. Two...
January 30, 2009
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
A description is not available for this item.
March 14, 2006
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
This specification covers the performance requirements for N-channel and P-channel, enhancementmode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor die. Two...