NPFC - MIL-PRF-19500/741
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
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| Organization: | NPFC |
| Publication Date: | 30 January 2009 |
| Status: | inactive |
| Page Count: | 16 |
scope:
This specification covers the performance requirements for N-channel and P-channel, enhancementmode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor die. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
November 18, 2019
TRANSISTOR, DIE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
Scope.
This specification covers the performance requirements for N-channel and P-channel, enhancementmode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor...
April 13, 2018
TRANSISTOR, DIE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
This specification covers the performance requirements for N-channel and P-channel, enhancementmode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor die. Two...
MIL-PRF-19500/741
January 30, 2009
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
This specification covers the performance requirements for N-channel and P-channel, enhancementmode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor die. Two...
January 30, 2009
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
A description is not available for this item.
March 14, 2006
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
This specification covers the performance requirements for N-channel and P-channel, enhancementmode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor die. Two...