UNLIMITED FREE
ACCESS
TO THE WORLD'S BEST IDEAS

SUBMIT
Already a GlobalSpec user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your GlobalSpec Experience

Finish!
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

DLA - MIL-PRF-19500/741

SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC

inactive
Organization: DLA
Publication Date: 14 March 2006
Status: inactive
Page Count: 15
scope:

This specification covers the performance requirements for N-channel and P-channel, enhancementmode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor die. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

intended Use:

The notes specified in MIL-PRF-19500 are applicable to this specification.

Document History

November 18, 2019
TRANSISTOR, DIE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
Scope. This specification covers the performance requirements for N-channel and P-channel, enhancementmode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor...
April 13, 2018
TRANSISTOR, DIE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
This specification covers the performance requirements for N-channel and P-channel, enhancementmode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor die. Two...
January 30, 2009
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
This specification covers the performance requirements for N-channel and P-channel, enhancementmode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor die. Two...
January 30, 2009
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
A description is not available for this item.
MIL-PRF-19500/741
March 14, 2006
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
This specification covers the performance requirements for N-channel and P-channel, enhancementmode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor die. Two...

References

Advertisement