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DOD - SMD 5962-06261

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION-HARDENED, 512K X 32-BIT (16MB) WITH EMBEDDED EDAC, LOW VOLTAGE SRAM, MONOLITHIC SILICON

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Organization: DOD
Publication Date: 11 May 2018
Status: active
Page Count: 29
scope:

This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes

Document History

October 3, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION-HARDENED, 512K X 32-BIT (16MB) WITH EMBEDDED EDAC, LOW VOLTAGE SRAM, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes...
SMD 5962-06261
May 11, 2018
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION-HARDENED, 512K X 32-BIT (16MB) WITH EMBEDDED EDAC, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
May 13, 2013
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION-HARDENED, 512K X 32-BIT (16MB) WITH EMBEDDED EDAC, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
March 7, 2011
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 32-BIT (16M) with embedded EDAC, RADIATIONHARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
July 7, 2010
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 32-BIT (16M) with embedded EDAC, RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
February 23, 2009
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 32-BIT (16M) with embedded EDAC, RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...

References

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