DOD - SMD 5962-97545
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 16-BIT x 2-BANK, SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY (SDRAM), MONOLITHIC SILICON
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| Organization: | DOD |
| Publication Date: | 13 December 2007 |
| Status: | inactive |
| Page Count: | 51 |
scope:
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and Q), and nontraditional performance environment (device class N). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class N, the user is cautioned to assure that the device is appropriate for the application environment.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
October 10, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 16-BIT x 2-BANK, SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY (SDRAM), MONOLITHIC SILICON
A description is not available for this item.
May 9, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 16-BIT x 2-BANK, SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY (SDRAM), MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device class Q), and nontraditional performance environment (device...
SMD 5962-97545
December 13, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 16-BIT x 2-BANK, SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY (SDRAM), MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and Q), and nontraditional performance environment...
April 2, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 16-BIT X 2-BANK, SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY (SDRAM), MONOLITHIC SILICON
A description is not available for this item.
March 16, 1999
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 16-BIT X 2-BANK, SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY (SDRAM), MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and Q), and nontraditional performance environment...
March 19, 1998
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 16-BIT X 2-BANK, SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY (SDRAM), MONOLITHIC SILICON
A description is not available for this item.
January 20, 1998
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 16-BIT X 2-BANK, SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY (SDRAM), MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and Q), and nontraditional performance environment...
June 17, 1997
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 16-BIT X 2-BANK, SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY (SDRAM), MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device Classes M and Q), and nontraditional performance environment...