DOD - SMD 5962-99574
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 1,124,022 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
inactive
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| Organization: | DOD |
| Publication Date: | 15 December 2008 |
| Status: | inactive |
| Page Count: | 39 |
scope:
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and Q), and nontraditional performance environment (device class N). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class N, the user is cautioned to assure that the device is appropriate for the application environment.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
November 13, 2020
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 1,124,022 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
Scope.
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device class Q), and nontraditional performance environment...
October 23, 2014
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 1,124,022 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device class Q), and nontraditional performance environment (device...
SMD 5962-99574
December 15, 2008
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 1,124,022 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and Q), and nontraditional performance environment...
August 28, 2003
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 1,124,022 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
A description is not available for this item.
September 2, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 1,124,022 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
A description is not available for this item.