DLA - SMD-5962-99574
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 1,124,022 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 2 September 2002 |
| Status: | inactive |
| Page Count: | 37 |
Document History
November 13, 2020
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 1,124,022 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
Scope.
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device class Q), and nontraditional performance environment...
October 23, 2014
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 1,124,022 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device class Q), and nontraditional performance environment (device...
December 15, 2008
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 1,124,022 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and Q), and nontraditional performance environment...
August 28, 2003
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 1,124,022 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-99574
September 2, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 1,124,022 GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
A description is not available for this item.